G-Ray Switzerland Sa

Iris Industries Sa

Zedel Sàrl

Claude Meylan

Hans Von Känel

Disclosed is a low temperature method of fabrication of short-wave infrared (SWIR) detector arrays (FPA) including a readout wafer and absorption layer connected for improved performances. The absorber layer includes a SWIR conversion layer with a GeSn or SiGeSn alloy. A first series of process steps realizes a CMOS processed readout wafer. A buffer layer is transferred on the readout wafer and annealed at temperatures compatible with the CMOS substrate, achieving a high quality crystalline buffer layer. The method assures a temperature profile between the light entrance surface of the buffer layer, and the readout electronics so the annealing temperature remains compatible with the CMOS. The buffer layer is used for further growth of a GeSn or SiGeSn structure to create the conversion layer and achieve the final structure of the SWIR FPA. Also disclosed is a SWIR FPA detector as realized by such method, and SWIR FPA applications.

Short-wave infrared detector and its integration with CMOS compatible substrates

Disclosed are methods of fabricating short-wave infrared detector arrays including readout and absorption wafers connected by a recrystallized a-Si layer. The absorber wafer includes a SWIR conversion layer with a GeSnalloy composition. Process steps realize the readout wafer and a portion of the absorption wafer, including bonding the readout wafer and a first portion of the absorption wafer. The a-Si intermediate layer linking the readout wafer and the first portion of the absorption wafer the a-Si intermediate layer is recrystallized by applying heat by a light source. The method assures a temperature profile between the light entrance surface and the CMOS electronic layer of the readout wafer maintaining readout layer temperature &#x3c;350&#xb0; C. during recrystallization. After the recrystallization process step the absorption wafer is completed by depositing the SWIR conversion layer. Also disclosed is a SWIR detector array realized by the method and SWIR detector array applications.

Short-wave infrared detector array and fabrication methods thereof

The invention relates to short-wave infrared (SWIR) detector arrays, and methods for forming such arrays, comprising a light conversion layer () having a germanium-tin alloy composition. The shortwave infrared (SWIR) detector array comprises an absorber wafer (II) and a readout wafer (I). The absorber wafer (II) comprises a SWIR conversion layer () which has a Gei-xSnalloy composition. The SWIR conversion layer () may have an internal structure comprising an array of rods () extending between a patterned support layer () and a doped silicon layer (). The detector comprises also a readout wafer (I) including an array of charge collecting areas and a readout electric circuit. The readout wafer (I) and the absorber wafer (II) are bonded by a low temperature bonding technique. The invention also relates to methods of fabrication of the SWIR detector array and to SWIR detector array applications such as a multi/hyperspectral LIDAR imaging systems.

Short-wave infrared detector array and method for the manufacturing thereof

CBCT including monolithic photon counting FPD for medical applications requiring real-time 3D imaging, like mammography, interventional guided procedures or external beam radiotherapy, includes CMOS processed readout electronics monolithically integrated with a single crystalline X-ray absorber by covalent wafer bonding near room temperature and adapted for single photon counting providing high energy, temporal and spatial resolution.

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Saint-Aubin-Sauges, Switzerland

Claude Meylan