Commissariat a L'energie Atomique

Soitec

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

S.o.i. Tec Silicon on Insulator Technologies, S.a.

Claude Jaussaud

Michel Bruel

Jean-Pierre Joly

Bernard Aspar

Jean Therme

Pere Roca I Cabarrocas

Jean-Antoine Gruss

Roland Madar

Jean-Fr&eacute;deric Clerc

Chrystelle Lagahe

Pierre Jean Ribeyron

Jean Comera

Jean-Fr&eacute;d&eacute;ric Clerc

Jerome Damon-Lacoste

Eric Jalaguier

Isabelle Garcon

Mikhail Anikin

Roland Madard

A semiconductor device including, on at least one surface of a crystalline semiconductor substrate, at least one first amorphous semiconductor region doped with a first type of conductivity. The semiconductor substrate includes, on the same at least one surface, at least one second amorphous semiconductor region doped with a second type of conductivity, opposite the first type of conductivity. The first amorphous semiconductor region, insulated for the second amorphous semiconductor region by at least ore dielectric region in the contact with the semiconductor substrate, and the second amorphous semiconductor region form an interdigitated structure.

Semiconductor device with heterojunctions and an inter-finger structure

The present invention relates to an intermediate suction support. The support has at least one suction surface () intended to receive a first face of at least one substrate comprising an embrittled layer, a film thus being defined between the first face of the substrate and the embrittled layer, the suction surface () of the intermediate support being the face with at least one suction element () comprising suction means provided so that, when the embrittled layer is submitted to a treatment leading to the separation of the film from the rest of the substrate, the film can be recuperated. Application to the production of a thin film structure.

Intermediate suction support and its utilisation for producing a thin film structure

The invention concerns a thin layer semi-conductor structure including a semi-conductor surface layer () separated from a support substrate () by an intermediate zone (), the intermediate zone () being a multi-layer electrically insulating the semi-conductor surface layer from the support substrate. The intermediate zone has a considered sufficiently good electrical quality of interface with the semi-conductor surface layer and includes at least one first layer, of satisfactory thermal conductivity to provide a considered as correct operation of the electronic device or devices which are to be elaborated from the semi-conductor surface layer (), the intermediate zone including additionally a second insulating layer of low dielectric constant, located between the first layer and the support substrate.

Thin layer semi-conductor structure comprising a heat distribution layer

A method of creating an electrically conducting bonding between a face of a first semiconductor element and a face of a second semiconductor element using heat treatment. The method applies the faces one against the other with the placing between them of at least one layer of a material configured to provide, after heat treatment, an electrically conducting bonding between the two faces. The deposited layers are chosen so that the heat treatment does not induce any reaction product between said material and the semi-conductor elements. Then, a heat treatment is carried out.

Creation of an electrically conducting bonding between two semi-conductor elements

Membrane pressure sensor containing silicon carbide and method of manufacture

Membrane pressure sensor comprising silicon carbide and method for making same

Method for producing a thin membrane and resulting structure with membrane

A micromachined structure able to operate at a high temperature, including a deformable membrane secured on a support allowing for its deformation. The membrane includes at least a membrane layer in a material retaining its elasticity for the high operating temperature. The membrane layer supporting components detect the deformation of the membrane, made in a semiconducting material, and it has an electrically insulating interface with the detection components, formed by an electrically insulating layer. The support is made in a material enabling the membrane to be released by a microelectronics technique.

Micromachined structure with a deformable membrane and method for making same

The invention relates to an apparatus for forming SiC on a nucleus. The apparatus comprises a first enclosure (100) defined by at least one wall (102, 110, 112) and able to receive a SiC nucleus (122), a SiC powder reservoir (118) and means (120) for heating the enclosure and, according to the invention, the wall (102, 110, 112) is essentially covered by at least one SiC layer (116).

Apparatus and process for the formation of monocrystalline silicon

The laser comprises an amplifying medium placed between a first reflector and a second dispersive reflector, and a rotating wheel adapted to carry a plurality of optical deflector elements interposed between the amplifying medium and the second dispersive reflector. A light beam having a certain incidence only in respect of a predetermined wavelength which is dependent on the incidence is reflected backwards from the second dispersive reflector. The optical reflector elements are placed periodically in the path of the light beam so as to produce a sequential modification in the incidence of the light beam emerging from the amplifying medium and to give the incidence a number of different values corresponding to the desired number of wavelengths.

Fast-switching multi-wavelength laser

Growing community of inventors

Meylan, France

Claude Jaussaud