Bell Communications Research, Inc.

Claude J Sandroff

Eli Yablonovitch

Thomas J Gmitter

Louis F DeChiaro

Richard N Nottenburg

Francoise S Sandroff

A relatively simple optical monitoring technique is utilized to measure temperature within a processing chamber. A III-V direct-bandgap semiconductor is optically excited to emit photoluminescence (PL). Spectral resolution of the emitted PL provides a direct measure of the bandgap of the semiconductor. In turn, the temperature of the semiconductor is derived from the bandgap measurement.

Temperature measurement in a processing chamber using in-situ monitoring

A method for imnproving the reliability of InGaAsP lasers in which the lasers are subjected to sulfide passivation so as to passivate defects on their facets. The lasers are then tested to determine whether any laser has an internal defect. For examples, all lasers can be tested at an electrostatic discharge (ESD) level which would cause any laser having an internal defect to fail. Failed lasers are discarded. The passivation greatly increases the ESD failure level for facet defects, and the ESD screening removes those lasers having internal defects. Thereby, those lasers remaining in the lot have greatly increased reliability to ESD.

Semiconductor laser passivation and overstressing

A method of passivating a gallium arsenide electronic device by depositing a sulfide film on a portion on the substrate to be passivated for providing an ideal interface layer wherein surface state density is substantially reduced. The resulting electrical performance of the device is significantly greater than similar devices which have not been subject to passivation. The device may be a heterojunction bipolar transistor, PIN diode or field effect transistor.

Passivation of gallium arsenide devices with sodium sulfide

A method of passivating the surface of a gallium arsenide substrate by cleaning the gallium arsenide substrate in an etching solution and depositing a sulfide film on the substrate. The step of depositing the sulfide film is preferably performed by spin-on of a sodium sulfide solution, followed by drying or annealing. The resulting passivated surface exhibits superior surface recombination velocity characteristics compared to prior art passivation techniques, thereby making possible superior solid state device operating characteristics.

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Tinton Falls, NJ, United States of America

Claude J Sandroff