Commissariat a L'energie Atomique Et Aux Energies Alternatives

Claude Chapelier

Vincent Renard

Toai Le Quang

A method for manufacturing a graphite layer on an interstitial carbide layer, includes depositing a metal layer formed by one or more metals on a carbide substrate, the metal layer being able to form an interstitial carbide, the metal layer at least partially covering the carbide substrate; performing a heat treatment during which a temperature higher than the dissociation temperature of the carbide of the carbide substrate is applied; wherein the heat allows a reaction between the metal layer and the carbide substrate to form the interstitial carbide layer as well as a first part of the graphite layer at the surface of the interstitial carbide layer, and, when the metal layer only partially covers the carbide substrate, a formation of a second part of the graphite layer at the surface of the carbide substrate which is not covered with the metal layer.

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Domene, France

Claude Chapelier