Sandia Corporation

Centre National De La Recherche Scientifique

California Institute of Technology

Etat Francais Centre National De La Recherche Scientifique

Claude Bernard

Roland Madar

James G Fleming

Paul M Smith

Ronald V Jones

Jonathan S Custer

Elizabeth Lynn Roherty-Osmun

Marc-A Nicolet

Joaquim Torres

Alain Rouault

Anne-Marie Dutron

Elisabeth Blanquet

Jean-Francois Million-Brodaz

A method for forming a Ti,Al,N coating on a part without plasma enhancement, wherein a chemical vapor deposition chamber is heated to 250-500&deg; C.; the part to be coated is heated to 550-650&deg; C. and placed in said chamber; and a mixture of titanium and aluminium chlorides, NH,and H,is injected into the chamber. The molar amount of NH,is greater than the molar amount of chlorides, and the molar amount of hydrogen is over five times greater than the molar amount of chlorides.

Non-plasma CVD method and apparatus of forming Ti1-xA1xN coatings

The present invention relates to the forming of amorphous or near-amorphous, ternary films of W-Si-N on substrates by chemical vapor deposition of WF.sub.6, SiH.sub.4 and NH.sub.3 and a carrier gas. The present invention method will allow the conformal forming of amorphous or near-amorphous, ternary films of W-Si-N on patterned non-planar substrates at temperatures at or below about 450.degree. C., by chemical vapor deposition of WF.sub.6, SiH.sub.4 and NH.sub.3 and a carrier gas. A typical temperature range for the formation of the films is between 473.degree. K. and 773.degree. K., while the reactor pressure can be varied between 0.1 to 50 Torr. The composition of the deposited films is adjusted by varying the flow ratios of the reactive gases.

Synthesis of W-Si-N films by chemical vapor deposition using WF.sub.6,

A method of depositing a ternary, refractory based thin film on a substrate by chemical vapor deposition employing precursor sources of tungsten comprising WF.sub.6, either silicon or boron, and nitrogen. The result is a W--Si--N or W--B--N thin film useful for diffusion barrier and micromachining applications.

Chemical vapor deposition of W-Si-N and W-B-N

A selective deposition process of a refractory metal silicide onto the silicon apparent surfaces of a wafer partially coated with SiO.sub.2, comprising the following steps: flowing in a cold-wall airtight chamber comprising said wafer a gaseous silane composite at a partial pressure P.sub.Si.sbsb.x.sub.H.sbsb.y and an halogenide of said metal at a partial pressure P.sub.Me ; heating the wafer to a first temperature (T1) for a first duration (t1), P.sub.Si.sbsb.x.sub.H.sbsb.y and P.sub.Me being chosen so as to allow a metal silicide deposition to be formed on the wafer, the silicon being overstoichiometric; and, heating the wafer to a second temperature (T2) lower than the first one for a second duration (t2), T2 being chosen as a function of P.sub.Si.sbsb.x.sub.H.sbsb.y and P.sub.Me so as to allow a stoichiometric metal silicide deposition to be formed on the wafer.

Selective deposition process of a refractory metal silicide onto silicon

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Brie et Angonnes, France

Claude Bernard