Alcatel N.v.

Alcatel

Avanex Corporation

Alcatel Lucent

Claude Artigue

Franck Mallecot

Denis Tregoat

Amaury Jourdan

Denis Leclerc

Emmanuel Grard

Francis Poingt

Philippe Brosson

Dominique Chiaroni

Denis Penninckx

Ludovic Noirie

Nicolas Le Sauze

Emmanuel Dotaro

Olivier Audouin

Joel Jacquet

François Dorgeuille

Christian Brot

Sylvaine Kerboeuf

Estelle Derouin

Frederic Pommereau

Stéphane Rabaron

Fr Ed Pommereau

Lionel Legouezigou

Jacques Benoit

Anton Ambrosy

Pierre Jean Laroulandie

Alwin Goeth

Klaus Adam

Frédéric Pommereail

An optical telecommunications network (), of metropolitan area type, having a ring type core (), and secondary rings (). In each sending access node (), transmitters () for sending information-carrying optical signals use a wavelength belonging to a group of wavelengths dedicated to the secondary ring () to which this sending access node () is connected. In each destination access node (), receivers () are capable of receiving all the wavelengths used by sending nodes () of the network. Communication nodes () comprise all-optical devices () for inserting, into the core fiber (), optical signals sent by a sending access node connected to the communication nodes. Optical couplers (), for taking from the core fiber () a so-called representative signal formed of a fraction of the power of each information-carrying signal, are respectively coupled to the receivers of the destination nodes.

Metropolitan area type optical telecommunications network comprising a ring type core

An optical packet node for receiving and transmitting optical packets is disclosed. A multiwavelength band splitting device splits received optical packets transmitted via multiwavelength bands into at least three groups, each group including one multiwavelength band. A multiwavelength band combining device combine the three groups of multiwavelength bands. At least two optical packet add drop multiplexers are placed between the multiwavelength band splitting device and the multiwavelength band combining device. Each optical packet add drop multiplexer adds and drops at least one individual wavelength to a respective multiwavelength band group. A load balancing stage is connected to the optical packet add drop multiplexers to provide an interconnection between at least two wavelength bands.

Optical packet node and optical packet add drop multiplexer

The invention relates to an optical amplifier device including a semiconductor optical amplifier component () including a guide active structure (), characterized in that the guide active structure () is subjected to a stress external to said component () coming from integrating said component () in said device, and in that said component () has a controlled sensitivity to the state of polarization of the light to be amplified in order to render the gain of said optical amplifier device insensitive to the polarization of said light to be amplified.

Optical amplifier device

In an optoelectronic module ( ) comprising a plastics material package ( ) accommodating a base ( ) fixed to the package ( ) and supporting an optical component ( ) coupled by an optical fiber ( ) to an optical connector ( ) of the package ( ), fiber displacements associated with thermal stresses are avoided by mounting the base so that it floats on the package ( ) and possibly the connector ( ). The floating mounting of the base ( ) is obtained by using for fixing the base one or more adhesives ( ) having a greater elasticity than the adhesives used to fix each of the two ends ( ) of the fiber ( ) to the base ( ) and the connector ( ), respectively.

Low-stress internal structure for optoelectronic housing

A method of fabricating a component having a crystalline silicon substrate includes the steps of depositing a layer of silica onto a crystalline silicon substrate, this silica layer being doped with dopants, and then treating the substrate. Before the doped silica layer is deposited, a barrier layer is formed on the substrate, consisting of a barrier material opposing diffusion of the dopants. The doped silica layer is deposited onto this barrier layer. The invention finds one particular application in connecting flat bundles of fibers in communication networks.

Method of fabricating a component with crystalline silicon substrate

A method is disclosed of assembling an optical module comprising at least two optical components whose waveguides are optically coupled to each other. Positioning one waveguide relative to the other one relies on two contact surfaces on the respective optical components cooperating with each other. A first contact surface includes a vertical bearing plane in the same horizontal plane as the optical axis of the waveguide of one of the optical components. A second contact surface includes a vertical bearing plane in the same horizontal plane as the optical axis of the waveguide of the other optical component.

Method of assembling an optical module

A hybrid optical device includes a passive component coupled optically to an active component, the passive component being formed in layers of silica on a substrate made of silica, the layers and the substrate thus forming a silica-on-silica structure. The hybrid optical device includes an intermediate element having good thermal conductivity and a coefficient of thermal expansion similar to that of the active component, wherein the active component is fixed to the intermediate element prior to insertion into the cavity, and the intermediate element is fixed to the structure so that the active component is located inside the cavity and is coupled optically to the passive component.

Hybrid optical module including an intermediate element

In a method for mounting an integrated optical component, a starting base structure includes a silica lower confinement layer and the cores of the future optical waveguides. This basic structure includes an alignment abutment so that a component to be mounted can be subsequently aligned with these waveguides. A silicon barrier layer is deposited on the abutment. Flame hydrolysis deposition is then used to deposit an upper silica layer to constitute the upper confinement layer of the waveguides. This silica layer also covers the alignment abutment, however. For this reason the region of the abutment is then etched by reactive ion etching to expose the abutment, which is protected from this etching by the barrier layer. The component to be mounted is then located relative to the abutment.

Method of forming a layer of silica to be eliminated subsequently and

For end-to-end alignment of two optical waveguides one of which is in the form of a strip buried in a semiconductor wafer, a longitudinal lateral mark is used constituted by the flank of a valley etched in the wafer and self-aligned to the strip formed beforehand. To achieve this self-alignment a protection layer is deposited in the area in which the mark is to be formed, a register layer is deposited on top of the protection layer and a photosensitive resin is deposited on top of these layers and the substrate. First selective etching eliminates the register layer at the location of the valley of the mark. Second and third selective etching respectively etch the lateral channels of the strip and then the valley of the mark.

Method of making a mark on a wafer such as a semiconductor wafer

In a wavelength division multiplexer suitable for integrated optical systems, to multiplex a succession of waves ranked according to their wavelength two diffraction gratings are formed at the edges of a common guide area. One focuses odd ranked waves onto a first entry of an output guide. The other focuses even ranked waves onto a second entry of the same output guide.

Wavelength division multiplexer suitable for integrated optical systems

A tunable multisection laser of the invention includes an active layer (C2) which is thicker in a phase tuning section (S3) and in a grating section (S2) including a Bragg distributed reflector (R) having a controllable equivalent pitch than it is in a light amplification section (S1). The invention is particularly applicable to making components for telecommunications by means of optical fibers.

Tunable semiconductor laser

Growing community of inventors

Bourg la Reine, France

Claude Artigue