Taiwan Semiconductor Manufacturing Comp. Ltd.

Other

Clark Lee

Chung-Lei Chen

Che-Yi Lin

Chien-Li Kuo

Wen-Sheng Wang

Yi-Chuan Lo

Hsun-Peng Lin

Chi-Fu Lin

Cheng-Hsin Chen

Chung Chieh Ting

Chih-Ming Hong

Sheng Ko

En-Shuo Lin

A deep trench structure may be formed between electrodes of a capacitive device. The deep trench structure may be formed to a depth, a width, and/or an aspect ratio that increases the volume of the deep trench structure relative to a trench structure formed using a metal etch-stop layer. Thus, the deep trench structure is capable of being filled with a greater amount of dielectric material, which increases the capacitance value of the capacitive device. Moreover, the parasitic capacitance of the capacitive device may be decreased by omitting the metal etch-stop layer. Accordingly, the deep trench structure (and the omission of the metal etch-stop layer) may increase the sensitivity of the capacitive device, may increase the humidity-sensing performance of the capacitive device, and/or may increase the performance of devices and/or integrated circuits in which the capacitive device is included.

Deep trench structure for a capacitive device

An image sensor includes a storage device, where the storage device includes a memory element, a first dielectric layer and a light shielding element. The memory element includes a storage node and a storage transistor gate, where the storage transistor gate is located over the storage node. The first dielectric layer is located over a portion of the storage transistor gate. The light shielding element is located on the first dielectric layer and includes a semiconductor layer. The semiconductor layer is electrically isolated from the memory element, where the light shielding element is overlapped with at least a part of a perimeter of the storage transistor gate in a vertical projection on a plane along a stacking direction of the memory element and the light shielding element, and the stacking direction is normal to the plane.

Image sensor and manufacturing method thereof

One or more semiconductor processing tools may form a deep trench within a silicon wafer. The one or more semiconductor processing tools may deposit a first insulating material within the deep trench. The one or more semiconductor processing tools may form, after forming the deep trench with the silicon wafer, a shallow trench above the deep trench. The one or more semiconductor processing tools may deposit a second insulating material within the shallow trench.

Trench isolation process

An optical test method is provided. The optical test method includes emitting light through a gap between two substrates of a tested optical element disposed on a holder to generate a plurality of light beams. The optical test method further includes driving the holder with the tested optical element to move to N positions. The optical test method also includes receiving one of the light beams from the tested optical element in the N positions to generate N first intensity signals. In addition, the optical test method includes determining the size of the gap of the tested optical element according to the N first intensity signals and reference data.

Optical test system and method for determining size of gap between two substrates of optical element

Ratchet wrench handle

The slidable driving stud of present invention is usually maintained in position by means of a pin carried by the ratchet wheel and engaging within a longitudinal groove on the slidable driving stud for limiting the movement of the slidable driving stud with respect to the ratchet wheel, the improvement which comprises the longitudinal groove extending from one end to another end of the driving stud; and a pair of spring biased ball detents being mounted on the vertical groove and near each end of the driving stud respectively to block the vertical groove.

Slidable driving stud for using in socket wrench and its manufacturing

The present invention provides a socket comprising a barrel of uniformal polygonal cross section having an axial polygonal wrenching aperture at the center and a slant inward chamfer at the outer surface of each end of the barrel. The socket is detachably received by a driver wheel of a ratchet wrench, in which the driver wheel has a polygonal receiving hole corresponding to the polygonal barrel, and a pair of ring detents are mounted in the opposite openings of the receiving hole to elastically grip the socket at the chamfers respectively.

Barrel type sockets

The present invention provides a reversible wrench which comprises a first gear face disc having a single side profile teeth on one of its flat sides and a square central hole, and rotatably mounted in one end of the wrench body; a second gear face disc having a symmetrical single side profile teeth on one of its flat sides and a central hole which is concentrically disposed in the first disc and meshed with the first disc by the depressing of an undulated spring washer or compression spring which is axially bounded between the discs and the wrench body; a driving stud which is slidably received through the square hole of the first disc, the hole of the second disc, and the spring washer, with at least one end thereof projecting from one of the opposite sides of the wrench body; in which the second gear face disc being non-rotatably connected to the wrench body.

Reversible wrench

This invention is related to a reversible pipe wrench, specifically to a new and improved construction of a pipe wrench by which a continuous clamping operation may be performed by rotating in one direction and then ratcheting in the reverse direction without repeatedly removing the wrench from a work piece, whereby the clamping job is simplified and eased.

Growing community of inventors

Taipei, Taiwan

Clark Lee