Globalfoundries Singapore Pte. Ltd.

National University of Singapore

Nanyang Technological University

Clark Kuang Kian Ong

Benjamin Colombeau

Kin Leong Pey

Sai Hooi Yeong

Dexter Xueming Tan

Chee Mang Ng

A method for fabricating a semiconductor device is presented. The method includes providing a substrate and forming a gate stack over the substrate. A first laser processing to form vacancy rich regions within the substrate on opposing sides of the gate stack is performed. The vacancy rich regions have a first depth from a surface of the substrate. A first implant causing end of range defect regions to be formed on opposing sides of the gate stack at a second depth from the surface of the substrate is also carried out, wherein the first depth is proximate to the second depth.

Method for fabricating semiconductor devices with shallow diffusion regions

Growing community of inventors

Singapore, Singapore

Clark Kuang Kian Ong