Motorola Corporation

Freescale Semiconductor,inc.

Arizona State University

Everspin Technologies, Inc.

Clarence J Tracy

Mark A Durlam

Gregory W Grynkewich

Brian R Butcher

John L Freeman, Jr

Kenneth H Smith

Kelly Wayne Kyler

Robert L Duffin

Gordon M Grivna

Saied N Tehrani

Eugene Youjun Chen

Syd R Wilson

Mark DeHerrera

Frederick J Robinson

Richard Williams

Charles A Synder

Hank Hukyoo Shin

Chun-Li Liu

Xiaodong T Zhu

Yong Liang

Theodore Zhu

Sucharita Madhukar

Andrew G Nagy

Prasad V Alluri

Mark Victor Raymond

Nirmal David Theodore

Stanislau Herasimenka

Anthony Polito

Donald K Stemple

Roland R Stumpf

Vivek Sharma

Methods and apparatuses for manufacturing self-aligned integrated back contact heterojunction solar cells are provided. In some embodiments, systems for forming a solar cell on a substrate are provided, the systems comprising: a master shadow mask positioned adjacent to the substrate on a first side of the master shadow mask; a first blocking mask placed adjacent to a second side of the master shadow mask; and a deposition machine that deposits material on the substrate through holes in the master shadow mask and the first blocking mask.

Methods and apparatuses for manufacturing self-aligned integrated back contact heterojunction solar cells

A method is provided for making a solar cell. The method includes providing a stack including a substrate, a barrier layer disposed on the substrate, and an anti-reflective layer disposed on the barrier layer, where the anti-reflective layer has charge centers. The method also includes generating a corona with a charging tool and contacting the anti-reflective layer with the corona thereby injecting charge into at least some of the charge centers in the anti-reflective layer. Ultra-violet illumination and temperature-based annealing may be used to modify the charge of the anti-reflective layer.

Method and tool to reverse the charges in anti-reflection films used for solar cell applications

A method for damage avoidance in transferring a monocrystalline, thin layer from a first substrate onto a second substrate involves epitaxial growth of a sandwich structure with a strained epitaxial layer buried below a monocrystalline thin layer, and lift-off and transfer of the monocrystalline thin layer with the cleaving controlled to happen within the buried strained layer in conjunction with the introduction of hydrogen.

Method for damage avoidance in transferring an ultra-thin layer of crystalline material with high crystalline quality

A method for contacting an electrically conductive layer overlying a magnetoelectronics element includes forming a memory element layer overlying a dielectric region. A first electrically conductive layer is deposited overlying the memory element layer. A first dielectric layer is deposited overlying the first electrically conductive layer and is patterned and etched to form a first masking layer. Using the first masking layer, the first electrically conductive layer is etched. A second dielectric layer is deposited overlying the first masking layer and the dielectric region. A portion of the second dielectric layer is removed to expose the first masking layer. The second dielectric layer and the first masking layer are subjected to an etching chemistry such that the first masking layer is etched at a faster rate than the second dielectric layer. The etching exposes the first electrically conductive layer.

Methods for contacting conducting layers overlying magnetoelectronic elements of MRAM devices

Methods for fabricating high work function p-MOS device metal electrodes are provided. In one embodiment, a method is provided for producing a metal electrode including the steps of: providing a high k dielectric stack with an exposed surface; contacting the exposed surface of the high k dielectric stack with a vapor of a metal oxide wherein the metal oxide is selected from the group consisting of RuO, IrO, ReO, MoO, WO, VO, and PdO; and contacting the exposed surface of the dielectric stack with a vapor of an additive selected from the group consisting of SiO, AlO, HfO, ZrO, MgO, SrO, BaO, YO, LaO, and TiO, whereby contacting the exposed surface of the dielectric stack with the vapor of the metal oxide and the vapor of the additive forms an electrode and wherein the additive is present at an amount between about 1% to about 50% by atomic weight percent in the electrode.

Conducting metal oxide with additive as p-MOS device electrode

Fabricating a magnetoresistive random access memory cell and a structure for a magnetoresistive random access memory cell begins by providing a substrate having a transistor formed therein. A contact element is formed electrically coupled to the transistor and a dielectric material is deposited within an area partially bounded by the contact element. A digit line is formed within the dielectric material, the digit line overlying a portion of the contact element. A conductive layer is formed overlying the digit line and in electrical communication with the contact element.

Magnetoresistive random access memory devices and methods for fabricating the same

A method for contacting an electrically conductive electrode overlying a first dielectric material of a structure is provided. The method includes forming a mask layer overlying the electrically conductive electrode and patterning the mask layer to form an exposed electrically conductive electrode material. At least a portion of the exposed electrically conductive electrode material is removed while an electrically conductive veil is formed adjacent the mask layer. A metal contact layer is formed such that said metal contact layer contacts the electrically conductive veil.

Method and structure for contacting an overlying electrode for a magnetoelectronics element

A method for fabricating a magnetic memory element structure comprises providing a dielectric layer having a conducting via. A first magnetic layer is formed overlying the dielectric layer and is in electrical communication with the conducting via. A non-magnetic layer and a second magnetic layer are formed overlying the first magnetic layer. A first conductive layer is deposited overlying the second magnetic layer and is patterned. A portion of the second magnetic layer is exposed and is transformed to form an inactive portion and an active portion. The active portion comprises a portion of a memory element and the inactive portion comprises an insulator. A sidewall spacer is formed about at least one sidewall of the first conductive layer and a masking tab is formed that overlies a portion of the memory element and extends to overlie at least a portion of the conducting via.

Methods for fabricating MRAM device structures

A method for fabricating an MRAM device structure includes providing a substrate on which is formed a first transistor and a second transistor. An operative memory element device is formed in electrical contact with the first transistor. At least a portion of a false memory element device is formed in electrical contact with the second transistor. A first dielectric layer is deposited overlying the at least a portion of a false memory element device and the operative memory element device. The first dielectric layer is etched to simultaneously form a first via to the at least a portion of a false memory element device and a second via to the operative memory element device. An electrically conductive interconnect layer is deposited so the electrically conductive interconnect layer extends from the at least a portion of a false memory element device to the operative memory element device.

Magnetoresistive random access memory device structures and methods for fabricating the same

Magnetoresistive random access memory device structures

A process for forming a capacitor with a high-k dielectric or ferroelectric layer within a semiconductor device is used to reduce the likelihood of oxidation or materials interactions between that layer and an underlying layer. A first electrode layer includes atoms that form along grain boundaries within the first electrode layer to reduce the oxidation of a conductive plug or undesired materials interactions.

Process of forming a semiconductor device and a semiconductor device

A non-volatile magneto-resistive memory positioned on a semiconductor substrate is shielded from stray magnetic fields by a passivation layer partially or completely surrounding the non-volatile magneto-resistive memory. The passivation layer includes non-conductive ferrite materials, such as Mn--Zn-Ferrite, Ni--Zn-Ferrite, MnFeO, CuFeO, FeO, or NiFeO, for shielding the non-volatile magneto-resistive memory from stray magnetic fields. The non-conductive ferrite materials may also be in the form of a layer which focuses internally generated magnetic fields on the non-volatile magneto-resistive memory to reduce power requirements.

Stray magnetic shielding for a non-volatile MRAM

Growing community of inventors

Tempe, AZ, United States of America

Clarence J Tracy