Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Commissariat a L'energie Atomique

Centre National De La Recherche Scientifique

Université Paul Sabatier (toulouse Iii)

Ulis

Claire Vialle

Abdelkader Aliane

Denis Pelenc

Jean-Louis Ouvrier-Buffet

Xavier Zucchi

Valerie Goudon

Pierre Imperinetti

Michel Vilain

Bérangère Hyot

Philippe Tailhades

Marie-Francoise Armand

Laurent Carle

Lionel Presmanes

Astrid Astier

Corinne Bonningue

Stephanie Capdeville

Valérie Goudon

Stéphanie Capdeville

Corine Bonningue

The invention concerns an electromagnetic radiation detection structure () comprising at least one absorbing element defining an absorption plane, and a MOSFET transistor (). The transistor comprises: at least one first and at least one second zone () of a first type of conductivity; at least one third zone () separating the first and second zones () from each other; and a gate electrode. The first zone (), the third zone () and the second zone () are formed respectively by a first, a third and a second layer that extend in the absorption plane parallel to each other and are arranged one after another in a direction perpendicular to the absorption plane. The gate electrode covers the third zone () along at least one lateral wall of said third zone ().

Electromagnetic radiation detection structure with optimised absorption and method for forming such a structure

A microbolometer may include a sensitive material based on vanadium oxide (VO) with an additional chemical element such as boron (B), but excluding nitrogen (N), the sensitive material wherein the sensitive material (i) is amorphous, (ii) has an electrical resistivity at ambient temperature in a range of from 1 to 30 &#x3a9;&#xb7;cm, (ii) has a homogeneous chemical composition, and (iv) has an amount of boron, defined as a ratio of a number of boron to vanadium atoms to that of vanadium, at least equal to 0.086.

Process for manufacturing a microbolometer containing vanadium oxide-based sensitive material

The invention relates to a process for manufacturing a microbolometer () comprising a sensitive material () based on vanadium oxide (VO) comprising an additional chemical element chosen from among boron (B), carbon (C), with the exception of nitrogen (N), comprising the following steps:

A process for manufacturing at least one microbolometer comprising a sensitive material based on vanadium oxide containing nitrogen as additional chemical element, includes steps of determining a non-zero effective amount of the additional chemical element starting from which the sensitive material, having undergone a step of exposure to a temperature Tfor a duration &#x394;t, has an electrical resistivity &#x3c1;at ambient temperature greater than or equal to 50% of the native value &#x3c1;of said sensitive material at ambient temperature; producing the sensitive material in a thin layer having an amount of the additional chemical element greater than or equal to the effective amount determined beforehand, the sensitive material being amorphous and having an electrical resistivity of between 1 and 30 &#x3a9;&#xb7;cm; and exposing the sensitive material to a temperature Tfor a duration &#x394;t.

The present invention relates to the use, as a thin sensitive-material film for bolometric detection, of at least one material based on an alloy comprising at least one chalcogenide, said chalcogen element being chosen from sulfur, selenium, telluride and their mixtures, characterized in that said material furthermore contains a sufficient amount of carbon and/or boron to confer upon the material a temperature coefficient of resistivity value at 300&#xb0; C. at least equal to 40% of the native value of the temperature coefficient of resistivity of said material at room temperature. The invention also relates to a bolometric device and its production process.

Sensitive material for bolometric detection

The present invention relates to the use as a sensitive material in a thin layer for bolometric detection of infrared radiation, of a material having a spinel ferrite structure of chemical composition, ignoring doping agents if any are present, satisfying empirical formula I:FeMAO.The invention also provides a bolometric device for detecting infrared radiation or for infrared imaging, and including at least one sensor provided with a sensitive element in the form of a thin layer as defined above.

Use of spinel ferrites as sensitive material for bolometric infrared detector devices

The invention relates to a passive microbolometer (), comprising a reflective screen () and a suspended membrane with the function of radiation absorber, thermometer and electrical connection. The membrane is supported by at least two anchor elements () fixed to a support substrate (). The reflective screen () may be embodied by at least one layer () of metallic material with a thickness of the order of 500 &#x212b; to 2000 &#x212b;. The screen () is arranged beneath the membrane in electrical contact with the membrane absorber element () such as to reduce the area resistance of the unit made up of the screen () and the absorbing element () and to avoid the absorption of radiation by the latter.

Method for production of a device for thermal detection of radiation comprising an active microbolometer and a passive microbolometer

Growing community of inventors

Saint-Egreve, France

Claire Vialle