Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Claire Fournier

Fabrice Nemouchi

Frederic-Xavier Gaillard

Frédéric-Xavier Gaillard

A method for manufacturing a microelectronic device is provided, including forming a first semiconductor material layer on a first region of a top surface of a substrate; and forming a second semiconductor material layer on a second region of the top surface of the substrate distinct from the first region, forming a first metallic layer above the first layer; forming a first contact layer of a first intermetallic compound or solid solution; forming a first sacrificial layer in an upper portion of the first contact layer; forming a second sacrificial layer in an upper portion of the second layer; removing all of the second sacrificial layer so as to expose a residual portion of the second layer; partially removing the first sacrificial layer; forming a second metallic layer above said residual portion; and forming a second contact layer of a second intermetallic compound or solid solution.

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Pont-Saint-Esprit, France

Claire Fournier