Texas Instruments Corporation

Claire Ching-Shan Jung

Neal T Murphy

Daryl Ross Koehl

Donald J Rigsby, Jr

Danny F Mathews

A system and method are disclosed including a vapor dryer chamber ( ) with a lid ( ). A heater ( ) is disposed within the vapor dryer chamber to vaporize liquid drying medium ( ), preferably isopropyl alcohol, in the bottom of the vapor dryer chamber ( ). Cooling coils ( ) disposed within an upper portion of the vapor drying chamber ( ) condense the drying medium vapor. A vapor monitor assembly ( ) is disposed within the vapor dryer chamber ( ) to monitor the vapor concentration within vapor dryer chamber ( ). A controller ( ) is associated with the vapor monitor assembly ( ) and evaluates vapor concentration measurements from the vapor monitor ( ).

System and method for controlling a vapor dryer process

A method for resist strip and particle removal. Wafers ( ) with a patterned resist formed thereon are placed on a wafer chuck ( ) in a scrubber tool ( ). Ozonated deionized water ( ) is applied to the surface of wafer ( ). The ozonated deionized water ( ) strips the resist and removes the resist residue without the use of hazardous chemicals. Particle removal is accomplished in the same tool ( ). The ozonated deionized water ( ) is formed in a closed canister ( ). Deionized water is circulated through the canister ( ) and ozone is added to the deionized water at a premixer ( ).

Application of ozonated DI water to scrubbers for resist strip and particle removal processes

A method for resist strip and metal contamination removal. Wafers ( ) with a patterned resist formed thereon are subjected to an ozonated deionized water solution, such as mist ( ). The ozonated deionized water solution ( ) strips the resist and removes the resist residue. At the end of the process, HCl ( ) is added to the deionized water ( ) prior to forming the ozonated deionized water solution ( ) to remove metal contaminants.

Ozonated DI water process for organic residue and metal removal processes

A method and apparatus for resist strip. Wafers ( ) with a patterned resist formed thereon are placed in a carrier ( ) in a process chamber ( ). An ozonated deionized water mist ( ) is sprayed on the surface of wafer ( ). The ozonated deionized water mist ( ) strips the resist and removes the resist residue without the use of hazardous chemicals. The ozonated deionized water mist ( ) may be formed in an atomizer that mixes deionized water ( ) with ozone ( ). The ozonated deionized water mist ( ) is then sprayed onto the wafers ( ) while the wafers are being rotated.

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Plano, TX, United States of America

Claire Ching-Shan Jung