Centre National De La Recherche Scientifique

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Commissariat a L'energie Atomique

Commissariat À L'énergie Atomique Et Aux Énergies Alternatives

Allegro Microsystems, LLC

Crocus-technology Sa

Université D'orleans

Claire Baraduc

Bernard Dieny

Philippe Sabon

Ioan-Lucian Prejbeanu

Christophe Thirion

Salim Dounia

Sébastien Petit

Nicolas De Mestier Du Bourg

Amandine Bocheux

Claude Cavoit

A magnetic sensor device comprising a plurality of magnetic sensor elements; each magnetic sensor element including a magnetic tunnel junction including a reference layer having a reference magnetization, a sense layer having a sense magnetization and a tunnel barrier layer; the sense magnetization comprising a stable vortex configuration in the absence of an external magnetic field, the vortex having a core reversibly movable in a plane (P) of the sense layer according to an external magnetic field; the sense layer including a peripheral shape in the plane (P), the peripheral shape including an asymmetric edge portion; the magnetic sensor elements being arranged such that the edge portion of a magnetic sensor element is opposite to the edge portion of the adjacent magnetic sensor element.

Magnetic sensor device having an improved measurement range

Magnetic element including a first ferromagnetic layer having a first magnetization including a stable magnetization vortex configuration having a vortex core. The first ferromagnetic layer includes an indentation configured such that the vortex core nucleates substantially at the indentation. Upon application of an external magnetic field in a first field direction, the vortex core moves along a first path and the first magnetization rotates around the vortex core in a counterclockwise direction. Upon application of the external magnetic field in a second field direction opposed to the first field direction, the vortex core moves along a second path and the first magnetization rotates around the vortex core in a clockwise direction. Both the first and second field path are substantially identical and move the vortex core away from the indentation.

Magnetic element having an improved measurement range

A spin transfer oscillator including a magnetic stack including at least two magnetic layers, at least one of the two magnetic layers is an oscillating layer that has variable direction magnetization and a current supply device configured to cause the flow of a current of electrons perpendicularly to the plane of the magnetic stack. The magnetic stack includes a device to generate inhomogeneities of current at the level of the surface of the oscillating layer and the intensity of the current supplied by the supply device is selected such that the magnetization of the oscillating layer has a consistent magnetic configuration, the magnetic configuration oscillating as a whole at the same fundamental frequency.

Spin transfer oscillator

A magnetoresistive sensor including: a first pinned-magnetization magnetic layer and a free-magnetization magnetic layer, separated by first separating layer for magnetic uncoupling. The sensor further includes a second pinned-magnetization magnetic layer, separated from the free-magnetization magnetic layer by a second separating layer for magnetic uncoupling, the first and second separating layers being located on either side of the free-magnetization magnetic layer, and the respective magnetizations of the first pinned-magnetization magnetic layer and of the free-magnetization magnetic layer, in the absence of an external field, are substantially orthogonal. The orientation of the magnetization of the second pinned layer is selectable.

Low noise magnetic field sensor

Growing community of inventors

Chirens, France

Claire Baraduc