Qunano Ab

Claes Thelander

Lars Samuelson

Jonas Ohlsson

Lars-Erik Wernersson

Erik Lind

Tomas Bryllert

Truls Löwgren

Anders Mikkelsen

Mikeal Bjork

Anil Dey

Mikael BJÖRK

A radial nanowire Esaki diode device includes a semiconductor core of a first conductivity type and a semiconductor shell of a second conductivity type different from the first conductivity type. The device may be a TFET or a solar cell.

Radial nanowire Esaki diode devices and methods

The present invention provides a nanostructured memory device comprising at least one semiconductor nanowire () forming a current transport channel, one or more shell layers () arranged around at least a portion of the nanowire (), and nano-sized charge trapping centers () embedded in said one or more shell layers (), and one or more gate electrodes () arranged around at least a respective portion of said one or more shell layers (). Preferably said one or more shell layers () are made of a wide band gap material or an insulator. The charge trapping centers () may be charged/written by using said one or more gate electrodes () and a change in an amount of charge stored in one or more of the charge trapping centers () alters the conductivity of the nanowire ().

Nanostructured memory device

The present invention relates to a nanostructured device for charge storage. In particular the invention relates to a charge storage device that can be used for memory applications. According to the invention the device comprise a first nanowire with a first wrap gate arranged around a portion of its length, and a charge storing terminal connected to one end, and a second nanowire with a second wrap gate arranged around a portion of its length. The charge storing terminal is connected to the second wrap gate, whereby a charge stored on the charge storing terminal can affect a current in the second nanowire. The current can be related to written (charged) or unwritten (no charge) state, and hence a memory function is established.

Charge storage nanostructure

The present invention relates to vertical nanowire transistors with a wrap-gated geometry. The threshold voltage of the vertical nanowire transistors is controlled by the diameter of the nanowire, the doping of the nanowire, the introduction of segments of heterostructures in the nanowire, the doping in shell-structures surrounding the nanowire, tailoring the work function of the gate stack, by strain engineering, by control of the dielectrica or the choice of nanowire material. Transistors with varying threshold voltages are provided on the same substrate, which enables the design of advanced circuits utilizing the shifts in the threshold voltages, similar to the directly coupled field logic.

Assembly of nanoscaled field effect transistors

The present invention relates to a device for data storage. In particular the invention relates to a single electron memory device utilizing multiple tunnel junctions, and arrays or matrixes of such devices. The data storage device according to the invention comprises at least one nanowhisker adapted to store a charge. Each of the nanowhiskers comprises a sequence of axial segments of materials of different band gaps, arranged to provide a sequence of conductive islands separated by tunnel barriers and a storage island arranged at one end of the conductive island/tunnel barrier sequence, whereby to provide a data storage capability. The number of conductive islands should preferably be between five and ten.

Growing community of inventors

Lund, Sweden

Claes Thelander