Xilinx, Inc.

Spansion Llc.

Advanced Micro Devices Corporation

Cinti Xiaohua Chen

Xiao-Yu Li

Angela Tai Hui

Minh Van Ngo

Ning Cheng

Wenmei Li

Joe W Zhao

Inkuk Kang

Boon-Yong Ang

Hiroyuki Kinoshita

Simon S Chan

Mohsen Hossein Mardi

Jean Yee-Mei Yang

Myongseob Kim

Hirokazu Tokuno

Hajime Wada

Qi Xiang

Sameer S Haddad

Yu Nan Sun

Jeffrey Allan Shields

Hidehiko Shiraiwa

Yi He

Jean Y Yang

Zhizheng Liu

Tazrien Kamal

Rinji Sugino

Jaeyong Park

Minh-Van Ngo

Jeff P Erhardt

Weidong Qian

Ming-Sang Kwan

Glenn O'Rourke

Yongjun Zheng

Ran Zhou

Examples described herein provide for determining a recipe for identifying from which buckets integrated circuit chips are taken to form units of a multi-chip apparatus. In an example, a method uses a processor-based system and uses a Markov Decision Process. Buckets are defined based on respective characteristics of manufactured chips. Each of the manufactured chips is binned into a respective one of the buckets based on the characteristic of the respective manufactured chip. A recipe for identifying from which of the buckets to take one or more of the manufactured chips to incorporate into respective ones of the units of the multi-chip apparatus is generated.

Markov decision process based recipe generation for multi-chip apparatus

An apparatus for a stacked silicon interconnect technology (SSIT) product comprises an interposer die, a plurality of integrated circuit dies, a plurality of active components forming an active connection between the integrated circuit dies and the interposer die, and a plurality of dummy components at the interposer die, the dummy components not forming an active connection between the integrated circuit dies and the interposer die. At least a subset of the dummy components forms a pattern, and the pattern comprises an identifier for the interposer die.

Method and apparatus for tracking interposer dies in a silicon stacked interconnect technology (SSIT) product

An apparatus relating generally to an interposer is disclosed. In such an apparatus, the interposer has a plurality of conductors and a plurality of charge attracting structures. The plurality of charge attracting structures are to protect at least one integrated circuit die to be coupled to the interposer to provide a stacked die. The plurality of conductors include a plurality of through-substrate vias.

Charge damage protection on an interposer for a stacked die assembly

A method for tracking an interposer die of a stacked silicon interconnect technology (SSIT) product includes forming a plurality of dummy components on the interposer die, and modifying one or more of the plurality of dummy components on the interposer die to form a unique identifier for the interposer die. An apparatus for a stacked silicon interconnect technology (SSIT) product includes an interposer die, and a plurality of dummy components at the interposer die. One or more of the plurality of dummy components is modifiable to form a unique identifier for the interposer die.

An embodiment of an integrated circuit is disclosed. For this embodiment, the integrated circuit includes circuit blocks. At least one transistor of a circuit block of the circuit blocks includes a portion of a semiconductor substrate having a diffusion layer. The circuit block has a relatively high diffusion pattern density as compared with others of the circuit blocks. The diffusion layer has an exposed surface active area constrained responsive to a design rule. The design rule is to limit to a maximum amount the surface active area in order to improve at least one parameter of the at least one transistor selected from a group consisting of an increase in switching speed and a decrease in leakage current of the at least one transistor of the circuit block having the relatively high diffusion pattern density.

Increasing circuit speed and reducing circuit leakage by utilizing a local surface temperature effect

A method of analyzing integrated circuit (IC) product yield can include storing, within a memory of a system comprising a processor, parametric data from a manufacturing process of an IC and determining a measure of non-random variation for at least one parameter of the parametric data using a pattern detection technique. The processor can compare the measure of non-random variation to a randomness criteria and selectively output a notification indicating that variation in the parameter is non-random according to the comparison of the measure of non-random variation to the randomness criteria.

Identifying non-randomness in integrated circuit product yield

An embodiment of the present invention reduces resources needed to estimate the Icc Current Temperature Scaling Factor (ITSF) of a device, and provides a method and apparatus to estimate ITSF from the device speed and performance characteristics which can be measured at room temperature. In one embodiment, a method for estimating the ITSF of an integrated circuit includes: determining a level of propagation delay of a portion of the integrated circuit; and determining an estimated Icc current temperature scaling factor from a correlation between the level of the propagation delay and a modeled Icc current temperature scaling factor.

Estimating Icc current temperature scaling factor of an integrated circuit

A memory device may include a substrate, a first dielectric layer formed over the substrate and a charge storage element formed over the first dielectric layer. The memory device may also include a second dielectric layer formed over the charge storage element and a control gate formed over the second dielectric layer. The memory device may further include an interlayer dielectric formed over the control gate and the substrate, where the interlayer dielectric includes a material that is substantially opaque to ultraviolet radiation.

Ultraviolet radiation blocking interlayer dielectric

Novel fabrication methods implement the use of dummy tiles to avoid the effects of in-line charging, ESD events, and such charge effects in the formation of a memory device region region. One method involves forming at least a portion of a memory core array upon a semiconductor substrate that involves forming STI structures in the substrate substantially surrounding a memory device region region within the array. An oxide layer is formed over the substrate in the memory device region region and over the STI's, wherein an inner section of the oxide layer formed over the memory device region region is thicker than an outer section of the oxide layer formed over the STI's. A first polysilicon layer is then formed over the inner and outer sections comprising one or more dummy tiles formed over one or more outer sections and electrically connected to at least one inner section.

Thin oxide dummy tiling as charge protection

A method includes forming a group of disposable hard mask structures on a semiconductor device that includes a group of memory cells. The method further includes using the disposable hard mask structures to precisely control a junction profile of the memory cells.

Disposable hard mask for forming bit lines

According to one exemplary embodiment, a structure in a semiconductor die comprises a metal pad situated in an interconnect metal layer, where the metal pad comprises copper. The structure further comprises an interlayer dielectric layer situated over the metal pad. The structure further comprises a terminal via defined in the interlayer dielectric layer, where the terminal via is situated on the metal pad. The terminal via extends along only one side of the metal pad. The structure further comprises a terminal metal layer situated on the interlayer dielectric layer and in the terminal via. The structure further comprises a dielectric liner situated on the terminal metal layer, where a bond pad opening is defined in the dielectric liner, and where the bond pad opening exposes a portion of the terminal metal layer. The interlayer dielectric layer is situated between the exposed portion of the terminal metal layer and metal pad.

Bond pad structure for copper metallization having increased reliability and method for fabricating same

A memory device may include a number of memory cells, a first interlayer dielectric formed over the memory cells and at least one metal layer formed over the interlayer dielectric. A dielectric layer may be formed over the metal layer. The dielectric layer may represent a cap layer formed at or near an upper surface of the memory device and may be deposited at a relatively low temperature.

Non-volatile memory device with increased reliability

According to one exemplary embodiment, a method comprises a step of etching a trench in an ILD layer, said trench having sidewalls and a bottom surface. The method further comprises determining a height of the sidewalls of the trench. The method further comprises filling the trench with interconnect metal such the interconnect metal extends above the trench. According to this exemplary embodiment, the method further comprises performing a CMP process to remove a portion of the interconnect metal. In the present invention, the height of the sidewalls of the trench is utilized to control an amount of polishing performed in the CMP process. The remaining portion of interconnect metal in the trench forms an interconnect line, where the thickness of the interconnect line is controlled by utilizing the height of the sidewalls of the trench to control the amount of polishing in the CMP process.

Method for achieving increased control over interconnect line thickness across a wafer and between wafers

According to one exemplary embodiment, a structure comprises a substrate. The structure further comprises at least one memory cell situated on the substrate. The structure further comprises a first interlayer dielectric layer situated over the at least one memory cell and over the substrate. The structure further comprises an oxide cap layer situated on the first interlayer dielectric layer. According to this exemplary embodiment, the structure further comprises an etch stop layer comprising TCS nitride situated on the oxide cap layer, where the etch stop layer blocks UV radiation. The structure further comprises a second interlayer dielectric layer situated on the etch stop layer. The structure may further comprise a trench situated in the second interlayer dielectric layer and the etch stop layer, where the trench is filled with copper. The structure may further comprise an anti-reflective coating layer situated on the second interlayer dielectric layer.

Structure and method for protecting memory cells from UV radiation damage and UV radiation-induced charging during backend processing

According to one exemplary embodiment, a structure comprises a substrate. The structure further comprises at least one memory cell situated on the substrate. The at least one memory cell may be, for example, a flash memory cell, such as a SONOS flash memory cell. The structure further comprises an interlayer dielectric layer situated over the at least one memory cell and over the substrate. According to this exemplary embodiment, the structure further comprises a UV radiation blocking layer which comprises silicon-rich TCS nitride. Further, an oxide cap layer is situated over the UV radiation blocking layer. The structure might further comprise an antireflective coating layer over the oxide cap layer. The interlayer dielectric may comprise BPSG and the oxide cap layer may comprise TEOS oxide.

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Fremont, CA, United States of America

Cinti Xiaohua Chen