International Business Machines Corporation

Linear Technology Corporation

Analog Devices International Unlimited Company

Ciaran J Brennan

Steven H Voldman

William R Tonti

John Atkinson Fifield

Mukesh Kumar

Michael Richard Ouellette

Joseph N Kozhaya

John Kenneth DeBrosse

Russell J Houghton

Scott Whitney Gould

Jeremy K Stephens

Steven J Tanghe

Mark David Jacunski

Daniel W Storaska

Michael Thomas Fragano

Steven Michael Eustis

Jeremy Paul Rowland

Brian Kirk Jadus

Michael A Killian

Douglas Brian Hershberger

Nicholas Theodore Schmidt

Erich C Schanzenbach

Andrew D Huber

David J Wager

Paul E Dunn

Robert A Proctor

Keith W Bennett

Neelesh Govindaraya Pai

Kevin A Duncan

Lu'ay Bakir

Mankoo Lee

Lin Lin

Kevin M Tompsett

A switched power circuit to control a common-mode signal. The switched power circuit includes a first switch and a second switch configured to generate switch mode voltage between a first node and a second node. The switched power circuit further includes a feedback circuit that is configured to detect common-mode voltage generated between the first node and the second node by a first signal generated by the first switch and a second signal generated by the second switch, and incrementally adjust a timing parameter of the first signal to adjust the common-mode signal.

Method to reduce the common-mode EMI of a full bridge converter using sampling common-mode feedback

An LLCC Secondary Overtone Resonant (LLCC-SOR) power converter obtains dramatically higher efficiency with light loads by providing a resonance in the transformer secondary that is approximately tuned to an odd order overtone of the upper primary switching frequency, an upper frequency limit of the primary switching frequency, and a secondary duty cycle control that engages once the upper primary switching frequency limit is reached. The transformer circuit resonates in an LLCC-SOR mode that regulates the output voltage when the maximum frequency limit is reached. In operation, the gain of the resonant circuit is raised above its regulation point under light loads, forcing the controller into duty cycle mode. The secondary current completes an odd number of oscillations per single oscillation of the primary current, and the primary current returns to near zero after each switching transition. Also, a zero-voltage switching condition is maintained on the primary switch.

LLCC secondary overtone resonant power converter

Multiple termination impedance values are provided in a switchable termination circuit so as to accommodate multiple transmission line characteristics. In one example, a termination matching circuit includes first and second nodes, a series interconnection of a first switch and a first impedance coupled between the first and second nodes, and another series interconnection of a second switch and a second impedance coupled between the first and second nodes. First and second control circuits respectively control the first and second switches such that a selectable impedance is provided between the first and second nodes through selective activation of the first and second switch devices by the first and second control circuits. In another example, additional nodes and resistors are provided to provide further termination impedance values.

Switchable termination with multiple impedance selections

A maximum voltage selection circuit may include multiple inputs, each for receiving a different input voltage, an output for delivering the highest of the input voltages, and a voltage selection circuit. The voltage selection circuit may automatically select the input having the largest voltage magnitude, automatically deliver the voltage at the selected input to the output, and not draw quiescent operating current from any of the inputs. For each and every unique combination of two of the multiple inputs, the voltage selection circuit may include an enhancement mode FET with a channel connected in series between a first input of the unique combination of the two inputs and the output; a connection between the gate of the enhancement mode FET and the second input of the unique combination of the two inputs through the channel of a depletion mode FET; an additional enhancement mode FET with a channel connected in series between the second of the unique combination of the two inputs and the output; and a connection between the gate of the additional enhancement mode FET and the first of the unique combination of the two inputs through the channel of an additional depletion mode FET.

High voltage selector circuit with no quiescent current

A Controller Area Network (CAN) driver (a transmitter) includes a conventional main driver having an open drain first driver MOSFET, for pulling up a first conductor of a bus in a dominant state, and an open drain second driver MOSFET, for pulling down a second conductor of the bus in the dominant state. Since it is difficult to perfectly match the driver MOSFET characteristics for conducting exactly equal currents during turning on and turning off, significant common mode fluctuations occur, resulting in electromagnetic emissions. Source followers are respectively connected in parallel with the first driver MOSFET and the second driver MOSFET for creating a low common mode loading impedance on the conductors during times when the main driver MOSFETs are turning on and turning off to greatly reduce any common mode fluctuations caused by the main driver MOSFETs.

Controller area network bus transmitter with complementary source follower driver

High voltage maximum voltage selector circuit with no quiescent current

An integrated system and method to achieve ESD robustness on an integrated circuit (IC) in a fully automated ASIC design environment is described. Electrical characteristics and electrical limits on the power network are translated to power route region constraints for each chip input/output (I/O) cell. Electrical limits on the signal network are translated into signal route region constraints for each chip I/O cell. These constraints are passed on to an I/O floorplanner (automatic placer of I/O cells) that analyzes trade-offs between these constraints. For I/O cells that can not be placed to satisfy both power and signal region constraints, the I/O floorplanner utilizes the knowledge of alternative power distribution structures to group I/Os and create local power grid structures that have the effect of relaxing the power region constraints. Instructions for creating these local power grid structures are passed on to the automatic power routing tool.

Electrostatic discharge failure avoidance through interaction between floorplanning and power routing

A method of manufacturing a device having embedded memory including a plurality of memory cells. During manufacturing test, a first test stress is applied to selected cells of the plurality of memory cells with a built-in self test. At least one weak memory cell is identified. The at least one weak memory cell is repaired. A second test stress is applied to the selected cells and the repaired cells with the built-in self test.

Method and apparatus for test and repair of marginally functional SRAM cells

A method for placing electrostatic discharge clamps within integrated circuit devices is disclosed. A region is initially defined within an integrated circuit design. A list of ESD-susceptible circuits located within the defined region is then generated. The center of gravity of the ESD-susceptible circuits located within the defined region is located. Next, an ESD protection device is placed at the center of gravity of the ESD-susceptible circuits located within the defined region. A determination is made as to whether or not all ESD-susceptible circuits within the list of ESD-susceptible circuits are protected by the placement of the ESD protection device. If so, the process is repeated in other regions until the entire integrated circuit is addressed. Otherwise, the defined region is divided into at least two smaller regions and the process is repeated.

Method for placing electrostatic discharge clamps within integrated circuit devices

A method for sensing data stored within a cross point magnetic random access memory (MRAM) device includes establishing an offset voltage of a sense amplifier, the sense amplifier selectively coupled to a selected bitline within the MRAM device, the selected bitline being in communication with an MRAM cell to be read. A read current is applied through the MRAM cell to be read, and a reference current is applied through the selected bitline. A signal voltage is sensed on the selected bitline, the signal voltage being generated in response to the read current and the reference current. The signal voltage is coupled to an input of the sense amplifier, wherein the sense amplifier provides an offset corrected output reflective of the data state of the MRAM cell.

Capacitively coupled sensing apparatus and method for cross point magnetic random access memory devices

A writeback and refresh circuit for a direct sense architecture memory wherein a plurality of primary sense amps are connected to a global data line and also to bitlines, each of which is coupled to an array of memory storage cells which are selected for write and read operations by a plurality of wordlines. A single secondary sense amp receives analog level data from the primary sense amps over the global data line, and includes a restore/writeback circuit which digitizes the data and then returns the digitized data over the global data line to the primary sense amp and back into the memory. A 2-cycle read/writeback operation is used for each memory read cycle, a first cycle read operation, and a second cycle writeback operation. The 2-cycle destructive read architecture eliminates the need for a cache and complex caching algorithms.

Writeback and refresh circuitry for direct sensed DRAM macro

In order to divert damaging currents into an electrostatic discharge (ESD) protection device during an ESD event, a tungsten wire resistor is incorporated into a current path connected in parallel with the ESD protection circuitry. The tungsten wire resistor has linear current-voltage (IV) characteristics at low currents, and non-linear IV characteristics at high current levels. The width and length of the resistor is chosen so that the resistor experiences significant self-heating caused by the higher currents generated by the ESD event. At a higher current level, the resistor becomes hot and its resistance increases dramatically. As a result the voltage drop across it increases thus diverting excess current into the parallel connected ESD protection circuitry. This limits the current through the resistor and thereby protects circuit elements in series with the resistor.

Tungsten hot wire current limiter for ESD protection

A localized direct sense architecture circuit includes a large number (e.g. 8) of microcells, each having a primary sense amp PSA, coupled to one global data line which is coupled to one secondary sense amp SSA. Each PSA includes its own bias current device, which supplies bias current to sense devices in the PSA and is also used for precharge, such that the bias current does not flow along the highly capacitive global data line. With this technical approach, the size of each bias current supply device can be substantially reduced, and the number of PSAs on one global data line can be increased for increased layout density.

Localized direct sense architecture

A bipolar transistor is disclosed. The bipolar transistor comprises: a silicon substrate; a collector formed in the semiconductor substrate, a base formed over the collector, the base having an intrinsic base region and an extrinsic base region, the extrinsic base region forming an internal resistor, an emitter formed over the intrinsic base region; and a dielectric layer formed between the extrinsic base region and the collector, the extrinsic base region. the dielectric layer and the collector forming an internal capacitor. The base of the transistor may be silicon-germanium.

Internally ballasted silicon germanium transistor

The present invention relates generally to protection of integrated circuits from electrostatic discharges and more specifically to the use of devices formed in isolated well regions for electrostatic discharge protection. One aspect of the present invention is an ESD protection circuit that includes a first FET and a second FET. The drain of the first FET is coupled to an ESD susceptible node and the source of the first FET is coupled to a first voltage terminal. The gate and a well of the first FET are coupled together and to the drain of the second FET. The source of the second FET is coupled to the first voltage terminal. The gate of the second FET is coupled to a second voltage terminal. The second voltage terminal is connected to a voltage source that is at the first voltage when the circuit is not powered, and at a voltage above the threshold voltage of the second FET when the circuit is powered. The well in which the first FET is formed is electrically isolated from other wells in the substrate. The electrical isolation surrounding the well includes (1) a second-type dopant isolation regions in a first type substrate surrounding and abutting the well, (2) a substrate doped with second type doping, and (3) dielectric isolation, such as deep trench, STI, and buried oxide layer. The well may be isolated by any of these methods separately or in combination.

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Essex, VT, United States of America

Ciaran J Brennan