Taiwan Semiconductor Manufacturing Comp. Ltd.

TSMC Solid State Lighting Ltd.

Epistar Corporation

Chyi Shyuan Chern

Chi-Ming Yang

Chih-Kuang Yu

Hsin-Hsien Wu

Hung-Yi Kuo

Chin-Hsiang Lin

Hsing-Kuo Hsia

Chun-Lin Louis Chang

Chung-Chieh Lee

Feng Yuan Hsu

Ryan Chia-Jen Chen

Ching-Wen Hsiao

Tsiao-Chen Wu

Kuo Bin Huang

Kuang-Huan Hsu

Simon Su-Horng Lin

Tze-Liang Lee

Ching-Hsiang Hsu

Pei-Ren Jeng

Chih-Tang Peng

Chu-Yun Fu

Hao-Ming Lien

Fu-Wen Liu

Ssu-Yi Li

Jui-Hei Huang

Kei-Wei Chen

Heng-Hsin Liu

Liang-Guang Chen

Hsiao-Wen Lee

Yun-Yue Lin

Jong-I Mou

Chih-Ming Ke

Chih Hung Chen

Chih-Cheng Lin

Nai-Han Cheng

Jung-Chih Tsao

Yu-Ku Lin

Jui-Chun Peng

Jo Fei Wang

Su-Horng Lin

Jun-Lin Yeh

Keith Kuang-Kuo Koai

Yu-Sheng Tang

Ching-Hua Chiu

Yung-Chang Chen

Tien-Ming Lin

Ying Xiao

Jih-Jse Lin

Zin-Chang Wei

Ming-Yu Fan

Tzu Kai Lin

Shang-Yu Tsai

Chung-Ru Yang

Soon Kang Huang

Chia-Hsun Chang

Ji James Cui

Gordon Kuo

Hung-Bin Lin

Huai-En Lai

Tzu Jeng Hsu

Li-Chao Yin

Jeng-Shin Ma

Wen-Chien Fu

Yi-Pin Chang

Ming-Hua Lo

Hsin-Chien Lu

The present disclosure provides a method for forming a semiconductor structure, including dispensing a dehydrating chemical over a fin of a substrate, wherein the dehydrating chemical includes a first chemical, and a second chemical having a melting point greater than the melting point of the first chemical, and solidifying the dehydrating chemical.

Method for forming a semiconductor structure using dehydrating chemical, and method for forming a semiconductor structure

In a method, a structure including two or more materials having different coefficients of thermal expansion is prepared, and the structure is subjected to a cryogenic treatment. In one or more of the foregoing and following embodiments, the structure includes a semiconductor wafer and one or more layers are formed on the semiconductor wafer.

Method of manufacturing semiconductor devices

The present disclosure provides a wet chemical heating system, including a first conduit for transporting wet chemical, a dispensing head connected to the first conduit, and a radiative heating element configured to heat the wet chemical in the first conduit and positioned at an upper stream of the dispensing head.

Wet chemical heating system and a method of chemical mechanical polishing

An ellipsometer includes a light source, a polarizer, an asymmetric wavelength retarder, an analyzer and an optical detection component. The light source is configured to provide a light beam having multiple wavelengths incident to a sample. The polarizer is disposed between the light source and the sample, and configured to polarize the light beam. The asymmetric wavelength retarder is configured to provide a varied retardation effect on the light beam varied by wavelength. The analyzer is configured to analyze a polarization state of the light beam reflected by the sample. The optical detection component is configured to detect the light beam from the analyzer.

Ellipsometer and method for estimating thickness of film

A method for generating an electromagnetic radiation includes the following operations. A target material is introduced in a chamber. A light beam is irradiated on the target material in the chamber to generate plasma and an electromagnetic radiation. The electromagnetic radiation is collected with an optical device. A gas mixture is introduced in the chamber. The gas mixture includes a first buffer gas reactive to the target material, and a second buffer gas to slow down debris of the target material and/or plasma by-product, so as to increase an reaction efficiency of the target material and the first buffer gas, and to reduce deposition of the debris of the target material and/or the plasma by-product on the optical device.

Apparatus and method for generating an electromagnetic radiation

An electromagnetic radiation generation apparatus includes a collector, a gas supplier and a gas pipeline. The collector has a reflection surface configured to reflect an electromagnetic radiation. The collector includes a bottom portion, a perimeter portion, and a middle portion between the bottom portion and the perimeter portion. The middle portion of the collector includes a plurality of openings. The gas supplier is configured to provide a buffer gas. The gas pipeline is in communication with the gas supplier and the collector, and configured to purge the buffer gas through the openings of the middle portion to form a gas protection layer near the reflection surface of the collector. The openings of the middle portion include a plurality of holes arranged in an array including a plurality of rows of holes, or a plurality of concentric gaps.

The present disclosure provides a dehydrating chemical for dehydrating a semiconductor substrate under an ambient temperature, including a first chemical having a melting point below the ambient temperature, and a second chemical having a melting point greater than the melting point of the first chemical, wherein the dehydrating chemical has a melting point less than the ambient temperature by predetermined &#x394;Tdegrees, and at least one of the first chemical and the second chemical has a saturated vapor pressure greater than a predetermined pressure Punder 1 atm.

An apparatus and a method for controlling critical dimension (CD) of a circuit is provided. An apparatus includes a controller for receiving CD measurements at respective locations in a circuit pattern in an etched film on a first substrate and a single wafer chamber for forming a second film of the film material on a second substrate. The single wafer chamber is responsive to a signal from the controller to locally adjust a thickness of the second film based on the measured CD's. A method provides for etching a circuit pattern of a film on a first substrate, measuring CD's of the circuit pattern, adjusting a single wafer chamber to form a second film on a second semiconductor substrate based on the measured CD. The second film thickness is locally adjusted based on the measured CD's.

Multi-zone temperature control for semiconductor wafer

A method for manufacturing a pellicle includes: providing a supporting substrate; forming an oxide layer over the supporting substrate; forming a metal layer over the oxide layer; forming a graphene layer over the metal layer; and removing at least a portion of the supporting substrate and the oxide layer. An associated method includes: providing a supporting substrate; forming a first silicon carbide (SiC) layer or a diamond layer over the supporting substrate; forming a graphene layer over the SiC layer or the diamond layer; and removing at least a portion of the supporting substrate and the first silicon carbide (SiC) layer or the diamond layer; wherein the pellicle is at least partially transparent to extreme ultraviolet (EUV) radiation. An associated pellicle is also disclosed.

Pellicle and method for manufacturing the same

An apparatus includes a wafer with a number of openings therein. For each opening, an LED device is coupled to a conductive carrier and the wafer in a manner so that each of the coupled LED device and a portion of the conductive carrier at least partially fill the opening. A method of fabricating an LED device includes forming a number of openings in a wafer. The method also includes coupling light-emitting diode (LED) devices to conductive carriers. The LED devices with conductive carriers at least partially fill each of the openings.

LED device with improved thermal performance

The present disclosure provides one embodiment of a light-emitting structure. The light-emitting structure includes a carrier substrate having first metal features; a transparent substrate having second metal features; a plurality of light-emitting diodes (LEDs) bonded with the carrier substrate and the transparent substrate, sandwiched between the carrier substrate and the transparent substrate; and metal pillars bonded to the carrier substrate and the transparent substrate, each of the metal pillars being disposed between adjacent two of the plurality of LEDs, wherein the first metal features, the second metal features and the metal pillars are configured to electrically connect the plurality of LEDs.

Doubled substrate multi-junction light emitting diode array structure

A device includes: a substrate; and a doped III-V compound layer disposed over the substrate; wherein: the doped III-V compound layer includes an upper boundary; the upper boundary has a micro-roughened texture and a macro-roughened texture where the micro-roughened texture located on; and the upper boundary includes dopant ions that are not present in a remainder of the doped III-V compound layer underneath the upper boundary.

Light emitting diode

A plurality of conductive pads are disposed on a substrate. A plurality of semiconductor dies are each disposed on a respective one of the conductive pads. A mold device is positioned over the substrate. The mold device contains a plurality of recesses that are each configured to accommodate a respective one of the semiconductor dies underneath.

Method and apparatus for accurate die-to-wafer bonding

Growing community of inventors

Taipei, Taiwan

Chyi Shyuan Chern