Industrial Technology Research Institute

Other

Novatek Microelectronics Corp.

United Microelectronics Corp.

Fitipower Integrated Technology, Inc.

Tai and Tseng Investments LLC

Chyh-Yih Chang

Ming-Dou Ker

Hsin-Chin Jiang

Che-Hao Chuang

Yu-Da Shiu

Jeng-Jie Peng

Tang-Kui Tseng

Tien-Hao Tang

Lucas J Myslinski

Chih-Cheng Tai

Kei-Kang Hung

Chun-Lin Hou

Li-Jen Hsien

Shih Ming Tseng

Zi-Ping Chen

Shih Hsiang Tseng

Hsing-Hua Sun

Tsuan-Lun Lung

Shih-Ming Tseng

Chen-Ming Chiu

Shih-Hsiang Tseng

Kuo-Ching Chen

The medication usage monitoring and reminding device and method enables a user to easily monitor usage of medications by weighing the medications using a weighing component, a processing component and an I/O component. Additionally, the device is able to remind a user regarding the medications if the medication has not been timely taken. The device is also able to obtain information regarding medications such as possible conflicts, updates and other information. The device is able to be used for food/drink information or dietary information.

Medication usage monitoring and reminding device and method

The power generation and transmission device and method is able to be used to harness power such as solar and/or wind power and then transmit the power to a device on the other side of a physical structure such as a house, a car, a umbrella, a tent, and an awning.

Renewable energy transmission, generation, and utilization device and method

An integrated circuit device for converting an incident optical signal into an electrical signal comprises a semiconductor substrate, a well region formed inside the semiconductor substrate, a dielectric layer formed over the well region, and a layer of polysilicon for receiving the incident optical signal, formed over the dielectric layer, including a p-type portion, an n-type portion and an undoped portion disposed between the p-type and n-type portions, wherein the well region is biased to control the layer of polysilicon for providing the electrical signal.

Polydiode structure for photo diode

Poly diode structure for photo diode

An ESD protection circuit using a novel substrate-triggered lateral bipolar junction transistor (STLBJT) for providing a discharging path between power rails. The ESD protection circuit comprises an ESD detection circuit and a STLBJT device. The STLBJT device formed in a P-type substrate includes N-type collector and emitter regions coupled to the power rails, respectively. The substrate region between the collector and emitter regions, on which there is no field oxide device, serves as a base of the STLBJT device. The STLBJT device further includes a first P-type region coupled to the ESD detection circuit and a second P-type region coupled to one of the power rails, which are spatially separated from the collector/emitter regions, respectively. The STLBJT device is turned on by substrate-triggering responsive to the signal coming from the ESD detection circuit and establishes the discharging path between the power rails.

Substrate-triggered bipolar junction transistor and ESD protection circuit

An exemplary lateral diffused metal oxide semiconductor device includes a first-type substrate, a gate oxide film disposed on the first-type substrate, a poly gate disposed on the gate oxide film, a first second-type slightly doped region formed in the first-type substrate and acting as a well, a first first-type highly doped region formed in the well and acting as a body, a first second-type highly doped region formed in the body and acting as a source, a second second-type highly doped region formed in the well and acting as a drain, a second first-type highly doped region formed in the body, and a first first-type doped region formed in the body and is beneath the source.

Lateral diffused metal oxide semiconductor device

An electrostatic discharge protection device that includes a semiconductor substrate of a first dopant type, at least one source/drain pair of a second dopant type formed in the substrate, wherein the source/drain pair is separated to define a channel region therebetween, a lightly-doped region of the first dopant type defined between the source/drain pair and including at least a portion of the channel region, a gate dielectric layer formed over the substrate, and a gate formed over the gate dielectric layer and above the channel region.

Electrostatic discharge protection device and method of manufacturing the same

A level shifter ESD protection circuit with power-on-sequence consideration used for receiving a first signal and outputting a second signal is provided. The level shifter circuit includes an inverter, a first switch, a second switch, a voltage level shifting circuit, a first ESD clamp and a second ESD clamp circuits. When the first power supply has been powered on and the second power supply is off, the first and second switches will remain off resulting from the power-off of the second power supply. Therefore, the second power source would not be affected by the first power supply because of passing through the ESD protection circuit.

Level shifter ESD protection circuit with power-on-sequence consideration

A system for measuring electrostatic discharge (ESD) characteristics of a semiconductor device that comprises at least one pulse generator generating ESD-scale pulses, a first point of the semiconductor device receiving a first ESD-scale pulse from the at least one pulse generator, a second point of the semiconductor device receiving the first ESD-scale pulse from the at least one pulse generator, at least a third point of the semiconductor device receiving a second ESD-scale pulse from the at least one pulse generator, and a data collector to collect data on the ESD characteristics of the semiconductor device.

Automatic transmission line pulse system

A separated power ESD protection circuit is disclosed. The separated power ESD protection circuit is coupled between a first and a second power lines. The separated power ESD protection circuit has a first diode, a second diode and a MOS transistor. The first diode has an anode and a cathode, wherein the anode is coupled to the first power line. The source of the MOS transistor is coupled to the second power line. The anode of the second diode is coupled to the second power line and cathode is coupled to the first power line. The first diode and the MOS transistor form a parasitic silicon-controlled rectifier (SCR) so as to provide a discharge route for ESD.

Separated power ESD protection circuit and integrated circuit thereof

An electrostatic discharge protection circuit includes a first terminal, a second terminal, an electrostatic discharge device coupled between the first and second terminals, and an active device coupled to the electrostatic discharge device and controlling an electrostatic current through the electrostatic discharge device. The electrostatic discharge device includes at least one of an SCR, an FOD, an active device, a BJT, and an MOS device.

Growing community of inventors

Hsinchu, Taiwan

Chyh-Yih Chang