Taiwan Semiconductor Manufacturing Comp. Ltd.

Chwei-Ching Chiu

Jian-Hong Lin

Yung-Huei Lee

Yu-Lun Chueh

Tsung-Cheng Chan

Chien-Neng Liao

Chun-Lung Huang

Jiaw-Ren Shih

Ming-Hong Hsieh

Bi-Ling Lin

Hsin-Chun Chang

Shiou-Fan Chen

Lee-Der Chen

Chewn-Pu Jou

Huan-Neng Chen

Chien-Jung Wang

Wen-Teng Wu

Chi-Min Hsieh

A method of forming a semiconductor device structure includes: forming a first conductive structure over a substrate, the first conductive structure including twin boundaries; and wherein the forming the first conductive structure includes manipulating process conditions so as to promote formation of the twin boundaries resulting in a promoted density of twin boundaries such that the first conductive structure has an increased failure current density (FCD) relative to a baseline FCD of an otherwise substantially corresponding second conductive structure which has an unpromoted density of twin boundaries, the unpromoted density being less than the promoted density and such that the first conductive structure has a resistance which is substantially the same as the second conductive structure.

Method for forming semiconductor device structure having conductive structure with twin boundaries

A method, for forming a semiconductor device structure, includes: forming a conductive structure over a substrate, wherein the conductive structure includes twin boundaries. The forming the conductive structure includes: manipulating process conditions so as to promote formation of the twin boundaries and yet control a density of the twin boundaries to be outside a range for which a portion of a curve is an asymptote of a constant value, the curve representing values of an atomic migration ratio corresponding to values of the density of the twin boundaries.

A method of making a semiconductor device includes forming a first opening in an insulating layer, forming a second opening in the insulating layer, forming a third opening in the insulating layer and filling the first opening, the second opening and the third opening with a conductive material. The first opening has a width and a length. The second opening has a width less than the length of the first opening, and is electrically connected to the first opening. The third opening has a width less than the width of the second opening, and is electrically connected to the second opening.

Method of manufacturing a semiconductor device

Semiconductor device components and methods are disclosed. In one embodiment, a semiconductor device component includes a conductive segment having a first surface, a second surface opposite the first surface, a first end, and a second end opposite the first end. A first via is coupled to the second surface of the conductive segment at the first end. A second via is coupled to the first surface of the conductive segment at the second end, and a third via is coupled to the second surface of the conductive segment at the second end.

Semiconductor device components and methods

A semiconductor device structure with twin-boundaries and method for forming the same are provided. The semiconductor device structure includes a substrate and a conductive structure formed over the substrate. The conductive structure includes twin boundaries, and a density of the twin boundaries is in a range from about 25 &#x3bc;mto about 250 &#x3bc;m.

Interconnect structure with twin boundaries and method for forming the same

One or more systems and techniques for managing one or more electronic devices are provided. A determination is made that a first capacitor in a set of one or more capacitors has a defect. Responsive to the determination, the first capacitor is disabled, and a second capacitor is enabled.

MiM capacitor

A semiconductor device includes a first interconnect structure. The first interconnect structure includes a first interconnect portion, a second interconnect portion and a third interconnect portion. The first interconnect portion has a width and a length. The second interconnect portion has a width less than the length of the first interconnect portion. The second interconnect portion is connected to the first interconnect portion. The third interconnect portion has a width less than the width of the second interconnect portion. The third interconnect portion is connected to the second interconnect portion.

Semiconductor device, layout design and method for manufacturing a semiconductor device

A method for forming a semiconductor test carrier including an insulating substrate having a top surface, a bottom surface, periphery; with a rectangular cavity centrally located on the top surface and extending through to the bottom surface. A conductive ground trace formed on the top surface at the periphery of the cavity with conductive corner power traces formed adjacent each corner of the ground trace, with a ruled pattern of conductive wire bond pads encircling the corner power traces. Wire bond pads are formed in a linear array on each of the four sides encircling the power traces. A first interstitial ball pad array encircles the conductive wire bond pads and connects with the bottom surface by way of conductive vias communicating with a second interstitial ball pad array at the bottom surface. A glass plate is attached to the underside of the insulated substrate to form a bottom supporting surface in the rectangular cavity. A semiconductor device is placed in the cavity and its backside adhesively bonded to the glass plate. The appropriate input/output terminals of the device are connected to appropriate wire bond pads and traces on the top surface of the substrate with metallurgically bonded conductive wire. The exposed ends of the wires are encapsulated with a sealing polymer.

Growing community of inventors

Hsinchu, Taiwan

Chwei-Ching Chiu