Samsung Electronics Co., Ltd.

Yonsei University

Chwee Iin Choong

Jong-Jin Park

Jung-kyun Im

Sang-Won Kim

Sang-hun Jeon

Un-yong Jeong

Ji-hyun Bae

Min-kwan Shin

Provided is a thin film transistor on fiber and a method of manufacturing the same. The thin film transistor includes a fiber; a first electrode, a second electrode and a gate electrode formed on fiber; a channel formed between the first and second electrodes; an encapsulant encapsulating the fiber, the first, second, and gate electrodes, and an upper surface of the channel; and a gate insulating layer formed in a portion of the inner area of the encapsulant.

Thin film transistor on fiber and manufacturing method of the same

A foldable thin film transistor (TFT) is provided, the foldable TFT including: a foldable substrate; source and drain electrodes interconnected on the foldable substrate; a channel layer including nanofibers of an organic semiconductor connecting the source and drain electrodes; a gate electrode electronically connected with the source and drain electrodes and the channel layer; and a gate insulating layer disposed between the channel layer and the gate electrode and comprising an ionic liquid and a resin.

Foldable thin film transistor

Growing community of inventors

Suwon-si, South Korea

Chwee Iin Choong