Taiwan Semiconductor Manufacturing Comp. Ltd.

National Yang Ming Chiao Tung University

Chur-Shyang Fu

Chun-Sheng Liang

Po-Tsun Liu

Jeng-Ya David Yeh

Han-Ping D Shieh

Li-Feng Teng

Hou-Ju Li

Yi-Teh Chou

A semiconductor device includes a substrate, a first active fin, a second active fin, a dummy fin and a first gate structure. The first and the second active fin are on the substrate and extend along a first direction. The dummy fin is disposed between the first active fin and the second active fin, and extends in the first direction. The dummy fin includes a plurality of layers, and each of the layers includes a material different from another layer. The first gate structure crosses over the dummy fin, the first and the second active fins.

Semiconductor device and method of manufacturing the same

The present invention relates to a high gain complementary inverter with ambipolar thin film transistors and fabrication thereof, comprising: a gate layer, a silica layer, a first active layer, a first source, a first drain, a second active layer, a second source and a second drain for fabrication cost and complexity reduction.

High-gain complementary inverter with ambipolar thin film transistors and fabrication thereof

Growing community of inventors

Hsinchu, Taiwan

Chur-Shyang Fu