Changxin Memory Technologies, Inc.

Chunyang Wang

Xinran Liu

Changli Zhu

Bo Shao

Zhenxing Li

Huan Wu

Embodiments of the present disclosure provide a method for obtaining parameters of a semiconductor structure, a method for obtaining a detection standard and a detection method. The method for obtaining parameters of a semiconductor structure includes: obtaining a semiconductor structure, the semiconductor structure including a substrate and a capacitor support structure on the substrate, the capacitor support structure having a plurality of capacitor holes therein, the capacitor holes penetrating the capacitor support structure in a thickness direction of the capacitor support structure; removing some height of the capacitor support structure; obtaining a test pattern, the test pattern being a pattern exposed at a top of the remaining capacitor support structure; and in the test pattern, obtaining a spacing between the capacitor holes at predetermined positions on the basis of a predetermined direction.

Method for obtaining parameters of semiconductor structure, method for obtaining detection standard and detection method

A method for forming a capacitor via includes: providing a to-be-processed wafer, the to-be-processed wafer including a substrate and a first dielectric layer and a first mask layer that are sequentially formed on a surface of the substrate; etching the first mask layer according to a compensated first etching parameter, to form a first patterned layer extending in a first etching direction; sequentially forming a second dielectric layer and a second mask layer on a surface of the first patterned layer; etching the second mask layer and the second dielectric layer according to a compensated second etching parameter, to form a second patterned layer extending in a second etching direction; and etching the first dielectric layer with the first patterned layer and the second patterned layer together as a capacitor pattern, to form a capacitor via.

Method for forming capacitor via

A method for predicting an inclination angle of an etched hole can include operations as follows. A preset change range of an etching rate of an etching device for an object to be etched on a surface of a monitored sample in different operation stages is determined. An etching rate change curve of the etching device for the object to be etched on the surface of a monitored sample in a current operation stage is acquired. When the etching rate change curve exceeds the preset change range, it is determined that an inclination angle of an etched hole of an etched product currently etched by the etching device exceeds a preset angle.

Method and device for predicting inclination angle, and method and device for monitoring etching device

Embodiments of the present application provide a process monitoring method and a process monitoring system. The process monitoring method includes: acquiring a semiconductor structure on which an etch process is performed in an etch chamber, and forming a corresponding test structure based on the semiconductor structure; acquiring first theoretical mass of the test structure after the etch process is theoretically performed; placing the test structure in the etch chamber to actually perform the etch process, and acquiring first residual mass of the test structure after the etch process is actually performed; and determining, based on the first theoretical mass and the first residual mass, whether an etch state of the etch process performed in the etch chamber is normal.

Process monitoring method and process monitoring system

Provided are a data presentation system, method and device, and a computer-readable storage medium. The data presentation system includes: a data collection device configured to collect multiple service system data each from a respective data source and store the service system data in a database; a data parsing device configured to obtain the multiple service system data from the database, and parse each service system data through a respective data model to obtain a data block corresponding to the respective data source; a request responding device configured to: in response to a data request sent by a client, obtain the data block matching the data request as a demanded data block; and a data sending device configured to send the demanded data block to the client to enable a display interface of the client to display the demanded data block.

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Hefei, China

Chunyang Wang