Hc Semitek Corporation

Chunyan Yang

Jiangbo Wang

Wenbing Li

Binzhong Dong

A semiconductor light-emitting diode, including: an n-GaN layer, a quantum well layer, an electron blocking layer, and a p-GaN layer, which are sequentially stacked on a substrate. The electron blocking layer includes at least one first AlGaN layer and at least one second AlGaN layer. The first AlGaN layer and the second AlGaN layer are alternately stacked. The adjacent first and second AlGaN layers have different Al component.

Growing community of inventors

Wuhan, China

Chunyan Yang