National University of Singapore

Chunxiang Zhu

Dim-Lee Kwong

Ming Li

En-Tang Kang

Shiyang Zhu

Jagar Singh

Koon-Gee Neoh

Qi-Dan Ling

Jingde Chen

Jian Zhu

Sungjoo Lee

Yu Tong

Daniel Siu-Hung Chan

In various embodiments, a simple, robust molybdenum disulfide (MoS) based photosensor is provided that is able to detect both light intensity and wavelength. The MoSbased photosensor may be structured as a field effect transistor (FET) with a back-gate configuration, including MoSnanoflake layers, an insulating layer coated, doped substrate, and source, drain and backgate electrodes. The photoresponse of the MoSbased photosensor exhibits a fast response component that is only weakly dependent on the wavelength of light incident on the sensor and a slow response component that is strongly dependent on the wavelength of light incident on the sensor. The fast response component alone may be analyzed to determine intensity of the light, while the slow response component may be analyzed to determine the wavelength of the light.

MoSbased photosensor for detecting both light wavelength and intensity

A compound comprises a polymeric chain with a repeat unit repeated more than 5 times. The repeat unit comprises conjugated first and second cyclic groups and a plurality of side groups each bonded to one of the cyclic groups. A side group bonded to the first cyclic group is an electron donor and a side group bonded to the second cyclic group is an electron acceptor, such that the compound is switchable between first and second electrical conductive states by application of an electric field to the compound. At least one of the side groups is selected so that the compound is soluble in an organic solvent. The compound may be used in films, memory cells, or electronic devices. A layer of the compound may be formed on a surface by dissolving the compound in an organic solvent, applying the solution to the surface, and then removing the solvent.

Soluble polymer with multi-stable electric states and products comprising such polymer

A method of fabricating an N-type Schottky barrier Source/Drain Transistor (N-SSDT) with ytterbium silicide (YbSi) for source and drain is presented. The fabrication of YbSiis compatible with the normal CMOS process but ultra-high vacuum, which is required for ErSifabrication, is not needed here. To prevent oxidation of ytterbium during ex situ annealing and to improve the film quality, a suitable capping layer stack has been developed.

Schottky barrier source/drain n-mosfet using ytterbium silicide

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Singapore, Singapore

Chunxiang Zhu