Globalfoundries Inc.

Marvell International Limited

Globalfoundries U.S. Inc.

Chunsung Chiang

Jack Tim Wong

Wuyang Hao

Devesh Dwivedi

Siva Kumar Chinthu

Lejan Pu

Suresh Pasupula

Yentsai Huang

Embodiments of the disclosure provide memory circuit, a sense amplifier and associated method for reading a resistive state in a memory device. The sense amplifier includes a bit cell configurable to a high or low resistance state; a sensing circuit that detects a voltage drop across the bit cell in response to an applied read current during a read operation and generates a high or low logic output at an output node; and a pulse generation circuit that increases the applied read current with an injected current pulse when a low to high transition of the resistive state of the bit cell is detected.

Single ended sense amplifier with current pulse circuit

The present disclosure generally relates to semiconductor structures and, more particularly, to a single path memory sense amplifier circuit and methods of manufacture. The circuit includes a sense amplifier circuit comprising a plurality of self-aligned transistors in a single sensing path; and a memory array connected to the sense amplifier circuit by the single sensing path.

Single path memory sense amplifier circuit

The present disclosure relates to a structure which includes a merged write driver circuit with a first device next to a first memory array and a second device next to a second memory array, and the merged write driver circuit being configured to share a write driver line between the first device and the second device.

Merged write driver based on local source line MRAM architecture

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San Jose, CA, United States of America

Chunsung Chiang