Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

Shenzhen China Star Optoelectronics Technology Co., Ltd.

Chunsheng Jiang

Yue Wu

The present application provides a method for fabricating a back channel etching oxide semiconductor TFT substrate, by depositing the first passivation layer on the source, the drain and the active layer, and treating the oxygen element containing plasma to a surface of the first passivation layer, infiltrating traces of oxygen element into the superficial layer of the channel region of the active layer through the first passivation layer, then using an oxygen element containing plasma to treat the surface of the first passivation layer, so that the traces of oxygen element infiltrates into the superficial layer of the channel region of the active layer via the first passivation layer, to supply the oxygen element to the superficial layer of the channel region, and ensure the oxygen element balance in the superficial layer, the first passivation layer acts as a barrier layer to ensure the stability of the TFT.

Method for manufacturing back channel etching type oxide semiconductor TFT substrate

The invention provides a BCE TFT substrate and manufacturing method thereof. The method uses low deposition power and low oxygen content to deposit first silicon oxide thin film; then increases deposition power with low oxygen content to deposit second silicon oxide thin film. The first and second silicon oxide thin films form a passivation layer; the second silicon oxide film is implanted with oxygen to form a superficial layer so that the Si:O atomic ratio in the superficial layer is close to or same as Si:O atomic ratio of SiO, to ensure the passivation layer in contact with the air side is strongly hydrophobic to prevent outside water vapor into the back-channel, while ensuring the side of passivation layer contacting IGZO active layer has a lower oxygen content to reduce the probability of forming unbalanced O-ions at the interface between passivation layer and IGZO active layer.

Multi-layered passivation layer of a back-channel-etched thin film transistor having different oxygen concentration

A BCE TFT substrate includes a base substrate. A gate and a gate insulation layer are sequentially formed on the base substrate. An IGZO semiconductor layer is formed on the gate insulation layer to serve as an active layer. A source and a drain are disposed on the active layer and spaced from each other. Each of the source and drain is formed of a Mo layer, a Cu layer, and a conductorized IGZO film that are sequentially stacked on the active layer. A passivation layer is disposed on the source, the drain, and the active layer.

Back-channel-etched TFT substrate

A manufacturing method for an array substrate is provided. The manufacturing method includes steps of: forming a first metal layer, a gate electrode layer, a gate electrode insulated layer, a semiconductor layer, a second metal layer, a source electrode layer, and a drain electrode layer on a base substrate in order. The step of forming the gate electrode layer on the first metal layer further includes steps of: depositing a gate electrode metal layer; exposing, developing, and wet etching on the gate electrode metal layer; and removing a photoresist layer. Metal cations are added into a stripper liquid, an electrochemical corrosion potential of which is less than that of the first metal layer, so as to avoid a short line problem.

Manufacturing method for array substrate

A manufacturing method of the back-channel-etched (BCE) TFT substrate, able to prevent the passivation layer from curling up and forming bubbles, while not causing damaging to the channel region of the active layer.

Manufacturing method of back-channel-etched (BCE) thin film transistor (TFT) substrate

Back-channel-etched TFT substrate and manufacturing method thereof

The invention provides a BCE TFT substrate and manufacturing method thereof. The method comprises forming a first IGZO thin film with polycrystalline IGZO particles in a predetermined area of active layer before sputtering IGZO, the polycrystalline IGZO particles in the first IGZO thin film used as seed crystal during sputtering to grow a C-axis crystallized IGZO in good crystalline state to form a second IGZO thin film. The first and second IGZO thin films form an active layer. Because the surface of the active layer is presented as C-axis crystallized IGZO, the active layer is not damaged by the copper etchant during etching source and drain so as to ensure stable performance of active layer and to avoid the development of special copper etching solution. As such, the BCE TFT substrate has stable electrical performance. The BCE TFT substrate manufactured by the above manufacturing method has stable electrical performance.

A manufacturing method of an array substrate of an OLED display device is provided. Active areas of a first thin film transistor Tand a second thin film transistor Tare formed by a first mask; channel doping areas, source electrode doping areas and drain electrode doping areas of Tand Tare formed by a second mask; gate electrodes of Tand Tare formed by a third mask; vias are formed by a fourth mask; source electrodes and drain electrodes of Tand T, a data line and a pixel electrode are formed by a fifth mask. The manufacturing method can simplify the process steps.

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Shenzhen, China

Chunsheng Jiang