Applied Materials, Inc.

Chunming Zhou

Yong Cao

Jothilingam Ramalingam

Shane Lavan

Kai Wu

Kevin Vincent Moraes

Xi Cen

Feihu Wang

Nobuyuki Sasaki

Peiqi Wang

Tom Ho Wing Yu

Wei Min Chan

Min Heon

Ju Ik Kang

Zhebo Chen

Joung Joo Lee

Wei Lei

Xiaozhou Che

Zhibo Yuan

Apparatus and methods to provide electronic devices comprising tungsten film stacks are provided. A tungsten liner formed by physical vapor deposition is filled with a tungsten film formed by chemical vapor deposition directly over the tungsten liner.

Low resistivity tungsten film and method of manufacture

Embodiments of the present disclosure generally relate to methods and apparatus for backside stress engineering of substrates to combat film stresses and bowing issues. In one embodiment, a method of depositing a film layer on a backside of a substrate is provided. The method includes flipping a substrate at a factory interface so that the backside of the substrate is facing up, and transferring the flipped substrate from the factory interface to a physical vapor deposition chamber to deposit a film layer on the backside of the substrate. In another embodiment, an apparatus for depositing a backside film layer on a backside of a substrate, which includes a substrate supporting surface configured to support the substrate at or near the periphery of the substrate supporting surface without contacting an active region on a front side of the substrate.

Method and chamber for backside physical vapor deposition

Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.

Methods for low resistivity and stress tungsten gap fill

Methods and apparatus for low resistivity and stress tungsten gap fill

A method of depositing a backside film layer on a backside of a substrate includes loading a substrate having one or more films deposited on a front side of the substrate onto a substrate support of a processing chamber, depositing, from the sputter target, a target material on the backside of the substrate to form a backside layer on the backside of the substrate, and applying an RF bias to an electrode disposed within the substrate support while depositing the target material. The front side of the substrate faces the substrate support and is spaced from a top surface of the substrate support, and a backside of the substrate faces a sputter target of the processing chamber.

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Fremont, CA, United States of America

Chunming Zhou