Tokyo Institute of Technology

Toshiba Materials Co., Ltd.

Chunmeng Dou

Hiroshi Iwai

Kuniyuki Kakushima

Yoshinori Kataoka

Parhat Ahmet

A resistance change memory device with a high ON/OFF radio can be provided according to an embodiment includes a first electrode containing a first element, a resistance change layer provided on the first electrode and containing an oxide of the first element, an oxygen conductive layer provided on the resistance change layer, containing a second element and oxygen, having oxygen ion conductivity, and having a relative permittivity higher than a relative permittivity of the resistance change layer, and a second electrode provided on the oxygen conductive layer. The resistance change layer undergoes dielectric breakdown earlier than the oxygen conductive layer when a voltage between the first electrode and the second electrode is continuously increased from zero.

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Tokyo, Japan

Chunmeng Dou