Globalfoundries Singapore Pte. Ltd.

Chartered Semiconductor Manufacturing Ltd (corporation)

Chunlin Zhu

Purakh Raj Verma

Sanford Chu

Jeoung Mo Koo

Yisuo Li

A high voltage device includes a substrate with a device region defined thereon. A gate stack is disposed on the substrate in the device region. A channel region is located in the substrate beneath the gate stack, while a first diffusion region is located in the substrate on a first side of the gate stack. A first isolation structure in the substrate, located on the first side of the gate stack, separates the channel and the first diffusion region. The high voltage device also includes a first drift region in the substrate coupling the channel to the first diffusion region, wherein the first drift region comprises a non-uniform depth profile conforming to a profile of the first isolation structure.

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Singapore, Singapore

Chunlin Zhu