Zhuzhou Crrc Times Electric Co., Ltd

Dynex Semiconductor Limited

Chunlin Zhu

Guoyou Liu

Liheng Zhu

Ian Deviny

Yangang Wang

Vinay Suresh

An IGBT chip having a Γ-shape mixed gate structure includes a plurality of mixed gate units. Each of the mixed gate units includes a gate region and two active regions located at two sides of the gate region. The gate region includes a trench gate and a planar gate that is located on a surface of the gate region, and the planar gate is connected with the trench gate and formed a Γ-shape mixed structure. In this way, the IGBT chip can have a significantly improved chip density, while retaining features of low power consumption and high current density of the trench gate and a feature of a wide safe operating area of the planar gate.

IGBT chip having folded composite gate structure

We describe herein a high voltage semiconductor device comprising a power semiconductor device portion () and a temperature sensing device portion (). The temperature sensing device portion comprises: an anode region (), a cathode region (), a body region () in which the anode region and the cathode region are formed. The temperature sensing device portion also comprises a semiconductor isolation region () in which the body region is formed, the semiconductor isolation region having an opposite conductivity type to the body region, the semiconductor isolation region being formed between the power semiconductor device portion and the temperature sensing device portion.

Power semiconductor device with a temperature sensor

An IGBT chip having a mixed gate structure includes a plurality of mixed gate units. Each of the mixed gate units includes a source region () and a gate region. The gate region includes a planar gate region () and a trench gate region (), which are respectively disposed at both sides of the source region (). A planar gate and a trench gate are compositely disposed on the same cell (), thereby greatly improving chip density while retaining both trench gate's features of low on-state energy loss and high current density and planar gate's feature of wide safe operating area.

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Hunan, China

Chunlin Zhu