Applied Materials, Inc.

Chunlei Zhang

Kartik Ramaswamy

Haitao Wang

Sergio Fukuda Shoji

Jaeyong Cho

Hamid Noorbakhsh

Fernando Silveira

Richard Charles Fovell

James P Cruse

Vijay D Parkhe

Sean S Kang

Ezra Robert Gold

Phillip A Criminale

Zhaozhao Zhu

Katsumasa Kawasaki

Brad L Mays

Daisuke Shimizu

Taiki Hatakeyama

Duy D Nguyen

Douglas A Buchberger, Jr

Tza-Jing Gung

Ajit Balakrishna

Anwar Husain

Michael C Kutney

Walter R Merry

Steven E Babayan

Evans Yip Lee

Kenny Linh Doan

Blake Erickson

Patrick John Tae

Chetan Mahadeswaraswamy

Wonseok Lee

Shane C Nevil

Roland R Smith

Yashaswini Pattar

Tina Tsong

David Ullstrom

Andrew Nguyen

Sanjeev Baluja

S M Reza Sadjadi

Yue Guo

Jared Ahmad Lee

Lawrence Wong

Jie Zhou

Reza Sadjadi

Ashutosh Agarwal

Kenneth Brian Doering

Vivek Bharat Shah

Tao Zhang

Bryan Liao

Jairaj Joseph Payyapilly

Maxim Mikhailovich Noginov

Smbat Kartashyan

Xue Yang

Andrey Semenin

Ritchie Dao

Derek Brodie

Scott Olszewski

Jared Ahmed Lee

Shrihari Sampathkumar

Jorge Zaninovich

Methods and apparatus for processing a substrate are provided herein. For example, apparatus can include a first voltage/current (V/I) probe configured to connect to an input side of a matching network of the processing chamber and a second V/I probe configured to connect to an output side of the matching network and a processor coupled to the first V/I probe and the second V/I probe and configured to, based on a phase gap between a V and I of an RF signal detected by at least one of the first V/I probe or the second V/I probe at a target frequency, detect a minimum phase gap between the V and I, and control at least one of impedance tuning of the matching network or process control of the processing chamber using at least one of a peak or RMS of V, I and phase measured at the target frequency or under sweeping frequency.

Methods and apparatus for processing a substrate

Methods and apparatus for controlling fluid distribution to multiple fluid delivery zones in an etch chamber is provided herein. In some embodiments, the apparatus includes a first flow ratio controller and a second flow ratio controller, each having a respective inlet, a first outlet coupled to a first fluid delivery zone in a process chamber, and a second outlet coupled to a second fluid delivery zone in the process chamber, wherein the first flow ratio controller and the second flow ratio controller are configured to provide a flow ratio of a first process fluid and a second process fluid, respectively, between the first outlet and the second outlet, and a third flow ratio controller configured to provide a flow rate of a third process fluid to at least one of the first fluid delivery zone, the second fluid delivery zone, or a third fluid delivery zone.

Multizone flow distribution system

Implementations disclosed describe a system including a light source, an optical sensor, and a processing device. The light source directs, during a first time, a probe light into a processing chamber through a window. The light source ceases, during a second time, directing the probe light into the processing chamber through the window. The optical sensor detects, during the first time, a first intensity of a first light. The first light includes a portion of the probe light reflected from the window and a light transmitted from an environment of the processing chamber through the window. The optical sensor detects, during the second time, a second intensity of a second light. The second light includes the light transmitted from the environment of the processing chamber through the window. The processing device determines, using the first intensity and the second intensity, a transmission coefficient of the window.

Transmission corrected plasma emission using in-situ optical reflectometry

A method includes processing a substrate in a process chamber according to a recipe, wherein the substrate comprises at least one of a film or a feature after the processing. The method further includes generating a profile map of the first substrate. The method further includes processing data from the profile map using a first model, wherein the first model outputs at least one of an estimated mesa condition of a substrate support for the process chamber, an estimated lift pin location condition of the substrate support an estimated seal band condition of the substrate support, or an estimated process kit ring condition for a process kit ring for the process chamber. The method further includes outputting a notice as a result of the processing.

Estimation of chamber component conditions using substrate measurements

Methods and apparatus of controlling a temperature of components in a process chamber that is heated by a plasma or a heater and cooled by a coolant flow through a heat exchanger. An apparatus, for example, can include a chuck assembly and/or a plasma source including a respective cooling plate; a proportional bypass valve connected between the respective cooling plate and a heat exchanger; a temperature sensor configured to measure a temperature of the coolant through the outlet channel of the respective cooling plate; and a controller that receives a measured temperature from the temperature sensor measuring, and in response to receiving the measured temperature controls a rate of flow of the coolant through the first coolant output line and the second coolant output line of the proportional bypass valve.

An advanced temperature control system and method are described for a wafer carrier in a plasma processing chamber. In one example a heat exchanger provides a temperature controlled thermal fluid to a fluid channel of a workpiece carrier and receives the thermal fluid from the fluid channel. A proportional valve is between the heat exchanger and the fluid channel to control the rate of flow of thermal fluid from the heat exchanger to the fluid channel. A pneumatic valve is also between the heat exchanger and the fluid channel also to control the rate of flow of thermal fluid from the heat exchanger and the fluid channel. A temperature controller receives a measured temperature from a thermal sensor of the carrier and controls the proportional valve and the pneumatic valve in response to the measured temperature to adjust the rate of flow of the thermal fluid.

Advanced temperature control for wafer carrier in plasma processing chamber

An electronic device manufacturing system capable of obtaining metrology data generated using metrology equipment located within a process chamber that performs a deposition process on a substrate according to a process recipe, wherein the process recipe comprises a plurality of setting parameters, and wherein the deposition process generates a plurality of film layers on a surface of the substrate. The manufacturing system can further generate a correction profile based on the metrology data. The manufacturing system can further generate an updated process recipe by applying the correction profile to the process recipe. The manufacturing system can further cause an etch process to be performed on the substrate according to the updated process recipe.

Methods and mechanisms for adjusting process chamber parameters during substrate manufacturing

A substrate processing system includes a process chamber, one or more robot, a substrate measurement system, and a computing device. The process chamber may process a substrate that will comprise a film and/or feature after the processing. The one or more robot, to move the substrate from the process chamber to a substrate measurement system. The substrate measurement system may measure the film and/or feature on the substrate and generate a profile map of the film and/or feature. The computing device may process data from the profile map using a first trained machine learning model, wherein the first trained machine learning model outputs a first chamber component condition estimation for a first chamber component of the process chamber. The computing device may then determine whether to perform maintenance on the first chamber component of the process chamber based at least in part on the first chamber component condition estimation.

Chamber component condition estimation using substrate measurements

Metrology slot plates, processing chamber lids and processing chambers having metrology slot plates are described. Each of the metrology slot plates independently comprises one or more of a plate blank, a reflectometer, a capacitance sensor, a gas flow meter, a manometer, a pyrometer, a distance sensor (laser) or an emissometer.

Metrology slot plates

An electrostatic chuck is described that has radio frequency coupling suitable for use in high power plasma environments. In some examples, the chuck includes a base plate, a top plate, a first electrode in the top plate proximate the top surface of the top plate to electrostatically grip a workpiece, and a second electrode in the top plate spaced apart from the first electrode, the first and second electrodes being coupled to a power supply to electrostatically charge the first electrode.

High power electrostatic chuck design with radio frequency coupling

Implementations described herein provide a method for processing a substrate on a substrate support assembly which enables both lateral and azimuthal tuning of the heat transfer between an electrostatic chuck and a substrate. The method includes processing a first substrate using a first temperature profile on a substrate support assembly having primary heaters and spatially tunable heaters. A deviation profile is determined from a result of processing the first substrate. The spatially tunable heaters are controlled in response to the deviation profile to enable discrete lateral and azimuthal tuning of local hot or cold spots on the substrate support assembly in forming a second temperature profile. A second substrate is then processed using the second temperature profile.

Azimuthally tunable multi-zone electrostatic chuck

Methods and apparatus for producing high aspect ratio features in a substrate using reactive ion etching (RIE). In some embodiments, a method comprises flowing a gas mixture of CHFand a companion gas into a process chamber, forming a plasma from the gas mixture using an RF power source connected to an upper electrode above the substrate and at least one RF bias power source connected to a lower electrode under the substrate, performing an anisotropic etch, via the plasma, of at least one layer of oxide or nitride on the substrate using a pattern mask, reducing power of the at least one RF bias power source to produce deposition of a passivation layer on the at least one layer of oxide or nitride on the substrate, and evacuating the process chamber while interrupting the RF power source to stop plasma formation.

Methods and apparatus for etching semiconductor structures

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Santa Clara, CA, United States of America

Chunlei Zhang