Institutt for Energiteknikk

Chunlan Zhou

Erik Stensrud Marstein

Halvard Haug

Sean Erik Foss

Su Zhou

Junjie Zhu

Wenjing Wang

A method for manufacturing a passivation stack on a crystalline silicon solar cell device. The method includes providing a substrate comprising a crystalline silicone layer such as a crystalline silicon wafer or chip, cleaning a surface of the crystalline silicon layer by removing an oxide layer at least from a portion of one side of the crystalline silicon layer, depositing, on at least a part of the cleaned surface, a layer of silicon oxynitride, and depositing a capping layer comprising a hydrogenated dielectric material on top of the layer of silicon oxynitride, wherein the layer of silicon oxynitride is deposited at a temperature from 100&#xb0; C. to 200&#xb0; C., and the step of depositing the layer of silicon oxynitride includes using NO and SiHas precursor gasses in an Nambient atmosphere and depositing silicon oxynitride with a gas flow ratio of NO to SiHbelow 2.

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Beijing, China

Chunlan Zhou