Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

Other

Chunhsiung Fang

Yuanchun Wu

Poyen Lu

The present invention discloses an auxiliary electrode transfer structure and a manufacturing method for a display panel. The auxiliary electrode transfer structure includes a transparent base layer; a light-to-heat transformation layer disposed above the transparent base layer; and an auxiliary electrode disposed above the light-to-heat transformation layer; a laser mechanism configured to form laser, wherein the laser penetrates the transparent base layer to the light-to-heat transformation layer.

Auxiliary electrode transfer structure and manufacturing method for display panel

The present disclosure provides an array substrate, a manufacturing method of the array substrate, and a display device. The array substrate includes a hydrogen ion film formed between an active layer and a source/drain electrode of a low temperature poly-silicon thin film transistor, and a hole is formed in a region of the hydrogen ion film where a metal-oxide-semiconductor thin film transistor is disposed. Based on the hydrogen ion film, the electrical performance and stability of the low temperature poly-silicon thin film transistor are improved. Furthermore, hydrogen elements are not diffused to the region where the metal-oxide-semiconductor thin film transistor is disposed.

Array substrate, manufacturing method thereof, and display device

A double-sided organic light emitting diode (OLED) display panel is disclosed and includes a plurality of sub-pixels each of which has a top emission region and a bottom emission region. The top emission region has a first anode metal layer, a first OLED device layer, a first cathode metal layer, and an organic barrier layer. The bottom emission region has a second anode metal layer, a second OLED device layer, and a second cathode metal layer. The present invention can reduce an overall thickness of the double-sided OLED display panel.

Double-sided organic light emitting diode (OLED) display panel and manufacturing method

The invention provides a TFT array substrate and display panel. The TFT array substrate comprises: a patterned metal oxide active layer, a patterned gate metal layer, and a patterned source/drain metal layer; and further comprises at least a patterned hydrogen-absorbing metal layer, a dielectric layer is disposed between the hydrogen-absorbing metal layer and the patterned metal oxide active layer. The TFT array substrate and display panel of the invention can reduce reaction between the hydrogen atoms and the active layer of metal oxide TFT to achieve improving reliability of TFT.

TFT array substrate and display panel

The present disclosure relates to a display panel including at least one scan line formed by a first metal layer, at least one data line formed by a second metal layer, and at least one dielectric layer between the first metal layer and the second metal layer. The scan line is of a segment structure including a plurality of sub-scan lines electrically connecting to connection patterns of the corresponding second metal layer via corresponding via holes of the dielectric layer, the connection patterns of the second metal layer electrically connects the sub-scan lines. The data line is of the segment structure including a plurality of sub-data lines electrically connecting to the connection patterns of the corresponding first metal layer via the corresponding via holes of the dielectric layer, and the connection patterns of the first metal layer electrically connects the sub-data lines.

Display panel

An OLED display device and a manufacturing method thereof are provided. The manufacturing method of the OLED display device realizes the effect of a plurality of non-connected OLED light emitting layers by providing an inverse trapezoidal photoresist in an interval region of a plurality sub-pixels. The produced OLED display device does not have lateral current forming an entire surface distributed cathode over the plurality of OLED light emitting layers of the common layer, that avoiding cross color phenomenon caused by carrier migration between adjacent sub-pixels and ensuring better display effect of the OLED display. Also, by fabricating an auxiliary cathode above or below the cathode and connected thereto, the sheet resistance of the cathode and the uneven brightness caused by voltage drop can both be reduced.

Organic light emitting display device and method of making the same

A manufacturing method for a thin film transistor array substrate is provided. The method includes steps of depositing a first photoresist layer on a substrate before depositing the active metal layer; removing the first photoresist layer on a surface of the gate layer from the active metal by a removing process after exposing and developing the first photoresist layer, so that a surface of the gate layer is not covered by the active metal; chemically reacting the active metal with a portion of the active layer by a predetermined process.

Manufacturing method for thin film transistor array substrate

This application provides a display device and an OLED display panel. The display device comprises a storage capacitor. A part of a source and drain metal layer is a first electrode of a storage capacitor. A cathode layer is a second electrode of the storage capacitor. An electron transmitting functional layer, a passivation layer, and an inorganic pixel defining layer arranged between the first electrode and the second electrode are the dielectric materials of the storage capacitor.

Growing community of inventors

Shenzhen, China

Chunhsiung Fang