Xiamen San'an Optoelectronics Co., Ltd

Xiamen San'an Optoelectronics Co., Ltd.

Chunhsien Lee

Zhendong Wei

Yu-Chieh Huang

Sihe Chen

Qihua Liao

Jianbin Chen

Zhiying Zheng

Yashu Zang

Tao Han

Chimeng Lu

A light-emitting device includes a light-emitting laminated structure, an electrode structure that is disposed on the light-emitting laminated structure, an insulation layer that is disposed on the light-emitting laminated structure, and a blocking layer structure that is interposed between the electrode structure and the insulation layer. The light-emitting laminated structure includes a first type semiconductor layer, a second type semiconductor layer, and an active layer that is interposed between the first type semiconductor layer and the second type semiconductor layer and is configured to emit light. The blocking layer structure has a first section and a second section that forms a continuous structure with the first section. The first section is interposed between a side wall of the electrode structure and the insulation layer, and the second section is interposed between the insulation layer and the light-emitting laminated structure.

Light-emitting device

A flip-chip light-emitting diode includes an epitaxial structure including a first semiconductor layer, an active layer and a second semiconductor layer that are sequentially disposed on one another in such order. The epitaxial structure is formed with first holes and second holes respectively at a first region and a second region that are independent from each other. Each of the first and second holes extends through the second semiconductor layer and the active layer, and partially exposes the first semiconductor layer. A surface of the first semiconductor layer exposed by the first holes has a total area smaller than a total area of a surface of the first semiconductor layer exposed by the second holes.

Flip-chip light-emitting diode

Growing community of inventors

XIAMEN, China

Chunhsien Lee