Macronix International Co., Ltd.

ChungTe Hsuan

Chao-Lung Lo

Kuang-Chao Chen

Tien-Chu Yang

Tahone Yang

Yi-Yien Tsai

Chien Hung Chen

A target pattern is provided including a first pattern in a first region. A sensor pattern is inserted in the target pattern in the first region. A flare intensity of the sensor pattern in the first region is determined. A pattern bias is determined based on the flare intensity.

Flare effect induced error correction

A system and method for modifying an integrated circuit (IC) layout includes performing a correction process, such as an optical proximity correction (OPC) process, only on regions within designated blocks that are defined around respective modified structures. An IC layout can be compared to a modified version of the IC layout to detect modified structures. One or more large blocks can then be defined around respective modified structures. A correction process can then be performed on only the one or more large blocks. Small blocks within respective large blocks can then be extracted from the modified IC layout and merged with the original IC layout to generate a final modified and corrected IC layout.

System and method for optical proximity correction of a modified integrated circuit layout

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Hsinchu, Taiwan

ChungTe Hsuan