Samsung Electronics Co., Ltd.

Chungsam Jun

Yusin Yang

Sangkil Lee

Suyoung Lee

Sung Yoon Ryu

Wooseok Ko

Janghee Lee

Younghoon Sohn

Jeongho Ahn

Choonshik Leem

Dongryul Lee

Doyoung Yoon

Dongchul Ihm

Yunjung Jee

Minkook Kim

Hyunwoo Kim

Jinwoo Lee

Jinsung Kim

Jongmin Kim

Sujin Lee

Jung Hwan Kim

Jaeyong Lee

Myungjun Lee

Souk Kim

Jaehyung Ahn

Sungyoon Ryu

Kwangil Shin

Kwangsoo Kim

Wahseng Yap

Daejun Park

Ilsuk Park

Joonseo Song

Hyeongcheol Lee

Yujin Cho

Inhye Park

Jonghyuk Kang

Hongche Noh

Seong Yun

Seungryeol Oh

Minho Rim

Jongcheon Sun

Sekye Jeon

Yoo Jin Jeoung

Kwanwoo Ryu

Disclosed are semiconductor inspection apparatuses and methods. The semiconductor inspection apparatus comprises a stage that supports a semiconductor device, a first column that irradiates a first electron beam toward the semiconductor device on the stage, a second column that irradiates a second electron beam toward the semiconductor device, and a detector that detects a secondary electron generated by the second electron beam. The first column is disposed to make a first angle with a top surface of the semiconductor device. The second column is disposed to make a second angle with the top surface of the semiconductor device. The first angle and the second angle are different from each other.

Semiconductor inspection apparatus and semiconductor inspection method using the same

In a substrate inspection method, a substrate is provided on a substrate stage, the substrate having internal wires and connection wires, the internal wires respectively provided between stacked insulating layers, the connection wires respectively extending from the internal wires and exposed to an upper surface of the substrate. An electric circuit of the internal wires in the substrate is modeled to generate a circuit model. AC power is applied to the substrate stage to obtain measured capacitance values of the internal wires through currents that are obtained from the connection wires. DC power is applied to the substrate stage to obtain measured resistance values of the internal wires through voltages that are obtained from the connection wires. Impedance values of the internal wires are calculated through the measured capacitance values and the measured resistance values. The impedance values and the circuit model are compared to determine reliability of the substrate.

Substrate inspection apparatus and substrate inspection method

A semiconductor wafer inspection system includes a wafer chuck disposed inside a chamber and on which a wafer is disposed, a light source configured to emit light for inspecting a pattern on the wafer to the wafer, an inspection controller configured to control the driving of the light source, a cooling gas gun disposed adjacent to the light source and configured to spray a cooling gas on a surface of the wafer, and a cooling controller configured to supply cooling air to the wafer chuck before light is emitted to the wafer and supply the cooling gas to the cooling gas gun.

Inspection system of semiconductor wafer and method of driving the same

Provided is a through-focus image-based metrology device including an optical device, and a computing device configured to acquire at least one through-focus image of a target from the optical device, generate an intensity profile based on the acquired at least one through-focus image, and perform metrology on the target based on the generated intensity profile, wherein the optical device includes a stage on which the target is disposed, the stage being configured to move by one step in at least one direction based on control of the computing device, and to acquire the at least one through-focus image, an image sensor disposed on the stage, an objective lens disposed between the image sensor and the stage, the objective lens being configured to transmit reflected light from the target, and a light source configured to emit illumination light to the target through the objective lens.

Through-focus image-based metrology device, operation method thereof, and computing device for executing the operation

An inspection apparatus and a method of inspecting a semiconductor device are disclosed. The inspection apparatus includes a stage on which a semiconductor device is positioned, a first light source irradiating a high-frequency light onto an inspection area of the semiconductor device to reduce a potential barrier of a PN junction in the semiconductor device, a beam scanner arranged over the semiconductor device and irradiating a charged particle beam onto the inspection area of the semiconductor device to generate secondary electrons, and a defect detector generating a detection image corresponding to the inspection area and detecting, based on a voltage contrast between a reference image and a plurality of detection images, a defect image indicating a defect in the semiconductor device from among the plurality of detection images.

Inspection apparatus for inspecting semiconductor devices using charged particles

A method of inspecting a semiconductor wafer is provided, the method includes scanning a plurality of inspection swaths on a wafer to obtain a plurality of image sets and producing a plurality of reference images from the plurality of image sets, respectively. The method of inspecting a semiconductor wafer further includes selecting a plurality of target images from the plurality of image sets, respectively. The method of inspecting a semiconductor wafer additionally includes comparing each reference image of the plurality of reference images with each target image of the plurality of target images to detect a defect image from each of the plurality of target images. A reference image being compared and a target image being compared are images scanned from the same inspection swath.

Method of inspecting semiconductor wafer, an inspection system for performing the same, and a method of fabricating semiconductor device using the same

Disclosed are apparatuses and methods for measuring a thickness. The apparatus for measuring a thickness including a light source that emits a femto-second laser, an optical coupler through which a portion of the femto-second laser is incident onto a target and other portion of the femto-second laser is incident onto a reference mirror, a detector configured to receive a reflection signal reflected on the reference mirror and a sample signal generated from the target and configured to measure a thickness of the target based on an interference signal between the reflection signal and the sample signal, and a plurality of optical fiber lines configured to connect the light source, the optical coupler, and the detector to each other may be provided.

Apparatus and method for measuring thickness

A method of fabricating a package includes providing a mold substrate supporting dies in cavities of a fan-out substrate, detecting positions of the dies with respect to the fan-out substrate, and forming interconnection lines. At least one of the interconnection lines includes a first portion extending from the fan-out substrate to a target position on the cavity disposed between the fan-out substrate and one of the dies the one of the dies disposed at a detected position different from the target position, and a second portion extending from the one die to the fan-out substrate.

Fan-out panel level package and method of fabricating the same

An ellipsometer includes a stage, a light source, a polarizer, a detector, and a processor. The stage is configured to support a substrate including a pattern. The light source is configured to emit illumination toward the substrate. The polarizer is configured to polarize the illumination. The detector is configured to generate, in association with a plurality of azimuthal angles, data corresponding to polarized illumination reflected from the substrate. The processor is configured to: control rotation of the stage in association with sequential inspection of the pattern at the plurality of azimuthal angles, and determine asymmetry of the pattern based on the data. Each azimuthal angle of the plurality of azimuthal angles corresponds to a different rotational state of the stage.

Ellipsometer and method of inspecting pattern asymmetry using the same

A method includes loading a substrate into a sensing chamber; while the substrate is in the sensing chamber, performing a spectral analysis of the substrate; transferring the substrate between the sensing chamber and a processing chamber coupled to the sensing chamber; processing the substrate in the processing chamber to form at least a first layer and/or pattern on the substrate; and based on at least the spectral analysis, determining whether a parameter resulting from the formation of first layer and/or pattern is satisfied.

Method of manufacturing a semiconductor device using semiconductor measurement system

A method of inspecting a semiconductor device includes providing a substrate, on which a mold layer with a plurality of mold openings is provided, milling the mold layer in a direction inclined at a predetermined angle with respect to a direction normal to a top surface of the substrate, such that an inclined cutting surface exposing milled mold openings is formed, the milled mold openings including first milling openings along a first column extending in a first direction and having different heights, obtaining image data of the cutting surface, the image data including first contour images of the first milling openings, and obtaining a first process parameter, which represents an extent of bending of the mold openings according to a distance from a top surface of the substrate, using positions of center points of the first contour images.

Method of inspecting semiconductor device and method of fabricating semiconductor device using the same

A semiconductor inspection system including an ion beam milling unit configured to irradiate at least one cluster-ion beam onto a surface of a sample wafer and etch the surface of the sample wafer and an image acquisition unit configured to irradiate an electron beam onto the etched surface of the sample wafer and acquire an image of the etched surface may be provided.

Semiconductor inspection system and methods of inspecting a semiconductor device using the same

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Suwon-si, South Korea

Chungsam Jun