Industrial Technology Research Institute

Innot Bioenergy Holding Co.

Chungpin Liao

Jen-Chau Wu

Dar-Chang Juang

Meihua Chao

Denny D Tang

Shin-Chii Lu

Shan-Ming Lan

An organic negative electrode is provided in the present application. The organic negative electrode comprises a first element having conductive material, a second element formed by a high polymer solution and set on the first element, and a third element having chlorophyll and formed on the second element. A battery with said organic negative electrode is also provided.

Organic negative electrode with chlorophyll and battery using the organic negative electrode

The present invention relates to a method for manufacturing a flat-plate battery. The method includes step S: providing a chlorophyll layer; step S: providing a first separator and a second separator absorbing a solution of organic salt respectively; step S: providing a negative-electrode layer; step S: coating the first separator on the negative-electrode layer; step S: coating the chlorophyll layer thereon; step S: coating the second separator thereon; step S: coating a positive-electrode layer thereon; and step S: sandwiching them between an upper plate and a lower plate. The flat-plate battery manufactured by the method can store hydrogen by the chlorophyll of the chlorophyll layer, and this method will not cause environmental pollution even when the flat-plate battery is discarded after use.

Method for manufacturing a flat-plate battery

A conductive reinforcing material used to form a negative electrode material is provided in the present invention. The conductive reinforcing material includes metal shavings containing elements selected from a group consisting of group II elements, group III elements and group VII elements. A negative electrode material and a negative electrode both with the conductive reinforcing material are also provided in the present invention.

Conductive reinforcing material, negative electrode material and negative electrode

An exemplary battery is provided in the present invention. The battery includes a current collector, a positive-electrode structure, a separation structure, a negative-electrode structure and a housing. The positive-electrode structure, the separation structure, the negative-electrode structure are encircled in sequence inside of the housing. At least one of the negative-electrode structure and the positive-electrode structure comprises chlorophyll. The battery of the present invention could store hydrogen by the chlorophyll of the positive-electrode structure and/or the negative-electrode structure to generate electricity.

Battery with chlorophyll electrode

An exemplary battery is provided in the present invention. The battery comprises a carbon rod, a positive-electrode structure, a separation structure, a negative-electrode structure and a housing. The positive-electrode structure, the separation structure, the negative-electrode structure and the housing encircle the carbon rod in sequence. At least one of the positive-electrode structure and the negative-electrode structure contains chlorophyll. The battery of the present invention stores hydrogen by the chlorophyll to generate electricity. Thus, not only is the manufacturing process of the battery simple, and economical, but also natural, non-toxic substances are employed, unlike the conventional batteries, the battery of the present invention will not cause environmental pollution even when discarding after being used.

An exemplary manufacturing method for a battery is provided in the present invention. The manufacturing method includes step S: providing a high polymer solution; step S: providing a negative-electrode structure; step S: providing a separation structure; step S: assembling the negative-electrode and the separation structure into a housing; and step S: inserting a current collector into the housing and filling a positive-electrode material therein to form a positive-electrode structure. At least one of the negative-electrode structure and the positive-electrode structure comprise chlorophyll. Thus, the manufacturing process of the battery is simple, and economical, and natural and non-toxic substances are used. Unlike the manufacturing process of conventional batteries, the battery manufactured according to embodiments of the present invention will not cause environmental pollution even when it is discarded after being used.

Manufacturing method of a battery

A flat-plate battery is provided in the present invention. The flat-plate battery includes a negative-electrode layer, a first separator, a chlorophyll layer, a second separator, a positive-electrode layer, an upper plate and a lower plate. The negative-electrode layer, the first separator, the chlorophyll layer, the second separator and the positive-electrode layer are stacked together in sequence, and then are sandwiched between the upper plate and the lower plate. The flat-plate battery of the present invention can store hydrogen by the chlorophyll of the chlorophyll layer to generate electricity. Thus, the manufacturing process of the flat-plate battery is simple and economical, and only natural and non-toxic substances are used. Unlike the manufacturing process of conventional batteries, the manufacturing process of the flat-plate battery of the present invention will not cause environmental pollution even when the battery is discarded after use.

Flat-plate battery

An exemplary separator of the present invention includes a first layer and a second layer. The first layer has a principal body made from high fiber material. The second layer is made from chlorophyll, and is deposed on the first layer. In one embodiment, the separator comprises a third layer, where the second layer is sandwiched between the first layer and the third layer. An organic battery using the separator and a method of manufacturing the separator are also provided in the present invention.

Separator and method of manufacturing the same and organic battery employing the same

A manufacturing method for a battery is provided in the present invention. The manufacturing method includes the steps of: Srolling up a positive-electrode structure by a carbon rod; Srolling up a separation structure; Srolling up a negative-electrode structure; and Sinserting the carbon rod with the positive-electrode structure, the separation structure and the negative-electrode structure into a paper tube. At least one of the positive-electrode structure and the negative-electrode structure contains chlorophyll. Thus not only is the manufacturing method of the battery simple, and economical, but also natural, non-toxic substances are employed, unlike the conventional batteries, the battery of the present invention will not cause environmental pollution even when discarding after being used.

A method of forming a silicon-on-insulator device having a buried layer is described. Ions are implanted into a first semiconductor substrate where it is not covered by a photoresist mask to form implanted regions. Alternatively, a silicide layer over the first semiconductor substrate is patterned to leave silicide regions. A first oxide layer is formed overlying the first semiconductor substrate whereby the implanted regions or the silicide regions form the buried layer structure. A second oxide layer is formed overlying a second semiconductor substrate. The first and second oxide layers are bonded together to form the wafer, using either the bond and etch back or the Unibond&trade; method to complete formation of an silicon-on-insulator wafer having a buried layer structure in the fabrication of an integrated circuit.

Method of manufacturing SOI wafer with buried layer

A MOSFET and IGBT are described that exhibit high breakdown voltage together with low on-resistance. This is achieved by providing an N type shunt that extends from the N&plus; drain (for power MOSFETs) or P&plus; emitter (for IGBTs), through the N&minus; region to a short distance below the gate oxide. To manufacture such a shunt, an epi wafer with N&minus;epitaxy is first provided on top of an N&plus; (for power MOSFET) or P&plus; (for IGBT) layer. Through a suitable mask (contact or freestanding) on the top surface, the wafer is then subjected to bombardment by protons or deuterons. Because of ion transmutation doping, a region of N type material forms wherever the surface is not masked. By controlling the energies of the ions, this region is caused to extend below the wafer's surface so as to just contact the N&plus; or P&plus; layer or even to go through it. To convert shunt material in the immediate vicinity of the gate oxide back to N&minus;, either counter-doping or trenching followed by dielectric filling and CMP are used.

Power MOSFET and IGBT with optimized on-resistance and breakdown voltage

Surface to surface electrical isolation of integrated circuits has been achieved by forming N type moats that penetrate the silicon as deeply as required, including across the full thickness of a wafer. The process for creating the moats is based on transmutation doping in which naturally occurring isotopes present in the silicon are converted to phosphorus. Several methods for bringing about the transmutation doping are available including neutron, proton, and deuteron bombardment. By using suitable masking, the bombardment effects can be confined to specific areas which then become the isolation moats. Four different embodiments of the invention are described together with processes for manufacturing them.

Monolithic device isolation by buried conducting walls

An alternative to conventional SOI and dielectric filled trenches for electrical isolation of integrated circuits is disclosed. This has been achieved by using proton bombardment to form semi-insulating regions. For all embodiments, the process of the invention begins only after the integrated circuit has been fully formed. In a first embodiment, protons bombard the entire back surface of the wafer thereby forming a substrate of semi-insulating material (resistivity greater than 10,ohm cm) on which the active and passive components rest. In the second embodiment, isolation trenches are formed by bombarding from the top surface through a contact mask formed by means of LIGA or similar technology. The third embodiment is a combination of the first two wherein both isolation regions and the semi-insulating substrate are formed.

Alternative structure to SOI using proton beams

A MOSFET and IGBT are described that exhibit high breakdown voltage together with low on-resistance. This is achieved by providing an N type shunt that extends from the N&plus; drain (for power MOSFETs) or P&plus; emitter (for IGBTs), through the N&minus; region to a short distance below the gate oxide. To manufacture such a shunt, an epi wafer with N&minus; epitaxy is first provided on top of an N&plus; (for power MOSFET) or P&plus; (for IGBT) layer. Through a suitable mask (contact or freestanding) on the top surface, the wafer is then subjected to bombardment by protons or deuterons. Because of ion transmutation doping, a region of N type material forms wherever the surface is not masked. By controlling the energies of the ions, this region is caused to extend below the wafer's surface so as to just contact the N&plus; or P&plus; layer or even to go through it. To convert shunt material in the immediate vicinity of the gate oxide back to N&minus;, either counter-doping or trenching followed by dielectric filling and CMP are used.

Method of making power MOSFET and IGBT with optimized on-resistance and breakdown voltage

An X-ray imaging array is described together with a method for its manufacture. The array is defined by a set of PN junctions in a silicon wafer that extend all the way through between the two surfaces of the wafer. The PN junctions are formed using neutron transmutation doping that is applied to P-type silicon through a mask, resulting in an array of N-type regions (that act as pixels) in a sea of P-type material. Through suitable placement of the biassing electrodes, a space charge region is formed that is narrower at the top surface, where X-rays enter the device, and wider at the lower surface. This ensures that most of the secondary electrons, generated by the X-ray as it passes through the wafer, get collected at the lower surface where they are passed to a charge readout circuit.

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Taichung, Taiwan

Chungpin Liao