Taiwan Semiconductor Manufacturing Comp. Ltd.

Chung-Yu Chiang

Chih-Yung Lin

Po-Nien Chen

Hsiao-Han Liu

Hoppy Lee

Da-Wen Lin

Shyh-Wei Wang

Examples of an integrated circuit with a capacitor structure and a method for forming the integrated circuit are provided herein. In some examples, an integrated circuit device includes a substrate and a trench isolation material disposed on the substrate. An isolation structure is disposed on the trench isolation material. A first electrode disposed on the isolation structure, and a second electrode disposed on the isolation structure. A capacitor dielectric is disposed on the isolation structure between the first electrode and the second electrode. In some such examples, the isolation structure includes a first hard mask disposed on the trench isolation material, a dielectric disposed on the first hard mask, and a second hard mask disposed on the dielectric.

Integrated circuits with capacitors

An integrated circuit device and method for manufacturing the integrated circuit device are disclosed. An exemplary method includes providing a substrate; forming a first gate over the substrate for a first device having a first threshold voltage characteristic, the first gate including a first material having a first-type work function; forming a second gate over the substrate for a second device having a second threshold voltage characteristic that is greater than the first threshold voltage characteristic, the second gate including a second material having a second-type work function that is opposite the first-type work function; and configuring the first device and the second device as a same channel type device.

Multi-threshold voltage device and method of making same

Growing community of inventors

Changhua County, Taiwan

Chung-Yu Chiang