Xiamen San'an Optoelectronics Co., Ltd

Quanzhou Sanan Semiconductor Technology Co., Ltd.

Chung-Ying Chang

Su-Hui Lin

Yu-Tsai Teng

Quanyang Ma

Meng-Hsin Yeh

Wen-Yu Lin

Dazhong Chen

Shiwei Liu

Chien-Yao Tseng

Hongwei Xia

Yun-Ming Lo

Ling-Yuan Hong

Qing Wang

Jianming Liu

Huining Wang

Shuo Yang

Renlong Yang

Bing-Yang Chen

Shutian Qiu

Chen-Ke Hsu

Yan Feng

Jiali Zhuo

Chang-Cheng Chuo

Xueliang Zhu

Shutao Liao

Zhenchao Lin

Bo-yu Chen

Jin Xu

Taiying Shen

Zhenni Que

Ke Liu

Ho-Chia Tseng

Shuijie Wang

Yaowei Chuang

Ji-pu Wu

Chiawen Wu

Hongbin Tang

Qihua Liao

Wen-Chia Huang

Weibin Shi

Chia-Hao Chang

Chunlan He

Baojun Shi

Lili Jiang

Linhua Cao

Ji-Pu Wu

Wen-chia Huang

A light-emitting diode includes an epitaxial unit, a first electrode, and a second electrode. One of the first electrode and the second electrode includes a first reflective layer, a wire-bonding electrode layer, a second reflective layer wrapping a portion of the wire-bonding electrode layer, and a stress adjustment layer which wraps around the first reflective layer. The first reflective layer includes platinum, and the second reflective layer includes a material which has a Mohs hardness of not less than 6. The stress adjustment layer has a Mohs hardness of not less than 6, and the stress adjustment layer has a thickness that is 65% to 75% of a thickness of the first reflective layer.

Light emitting diode and method for making the same

A light-emitting device includes a substrate and an epitaxial unit. The substrate has a first and a second surface. The substrate is formed on the first surface with a plurality of protrusions. The epitaxial unit includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially disposed on the first surface of the substrate. The first surface of the substrate has a first area that is not covered by the epitaxial unit, and a second area this is covered by the epitaxial unit. A height difference (h) between the first area and the second area is no greater than 1 μm. A display apparatus and a lighting apparatus are also disclosed.

Light-emitting device and lighting apparatus

A light-emitting device includes an epitaxial structure that includes a first semiconductor layer, an active layer and a second semiconductor layer. The light-emitting device further has a transparent current spreading unit, a first electrode and a second electrode. The transparent current spreading unit includes a first transparent current spreading layer and a second transparent current spreading layer. The first transparent current spreading layer is doped with aluminum and has a thickness that accounts for 0.5% to 33% of a thickness of the transparent current spreading unit. The second transparent current spreading layer has a thickness greater than that of the first transparent current spreading layer. A light-emitting apparatus includes a circuit control component, and a light source that is coupled to the circuit control component and that includes the aforesaid light-emitting device.

Light-emitting device

An LED device includes an epitaxial layered structure that includes a first semiconductor layer, a light emitting layer and a second semiconductor layer, first and second electrodes that are disposed on the epitaxial layered structure, and an insulating structure. The first electrode includes a first body portion and a first extending portion connected together. The first extending portion includes a first part and multiple second parts. A projection of the first part on the first semiconductor layer does not overlap a projection of the insulating structure on the first semiconductor layer. The first part has a first sub-part and multiple second sub-parts. A projection of the first sub-part on the first semiconductor layer has a first length, and a projection of each of the second sub-parts on the first semiconductor layer independently has a second length measured in the same direction. The first length is greater than the second length.

Light emitting diode device

A light-emitting device includes a substrate, multiple light-emitting units that are disposed on the substrate, that are spaced apart by an isolation trench and that are and electrically interconnected by an interconnecting structure, and an insulating layer with thickness of 200 nm to 450 nm. A potential difference between adjacent two light-emitting units not in direct electrical connection is at least two times forward voltage of each of the light-emitting units. Each light-emitting unit includes a light-emitting stack and a light-transmissible current spreading layer. The insulating layer covers the light-transmissible current spreading layers and at least a part of the light-emitting stacks.

High voltage light-emitting device

An epitaxial substrate structure includes: a patterned substrate unit including a substrate having a top surface and spaced-apart protrusions formed thereon; and a buffer layer disposed on the top surface and the protrusions. Each of the protrusions has a bottom adjacent to the top surface, and a top opposite to the bottom. The buffer layer has a first portion disposed on the top surface, and second portions respectively disposed on the protrusions. Each of the second portions of the buffer layer has a thickness that gradually reduces from the bottom to the top along a respective one of the protrusions. An LED chip including the epitaxial substrate structure and manufacturing methods of the epitaxial substrate structure and the LED chip are also provided.

Epitaxial substrate structure, light emitting diode chip including the same, and manufacturing methods thereof

A light-emitting device includes a light-emitting laminated structure, a first electrode, and a second electrode. The first electrode has a reflection layer, an intermediate layer, and an electrically conductive layer. The intermediate layer includes a barrier layer having a first repeating paired layer unit and a second repeating paired layer unit, each of which has a platinum layer. The first repeating paired layer unit is closer to the electrically conductive layer than the second repeating paired layer unit, and a thickness of the platinum layer of the first repeating paired layer unit is greater than a thickness of the platinum layer of the second repeating paired layer unit.

Light emitting device

A light-emitting device includes a substrate, a first and second mesa structures disposed on the substrate, at least one current blocking element, at least one conductive bridging element, and first and second conductive pads. The conductive bridging element is disposed on the current blocking element, and is electrically connected to the first and second mesa structures. The first and second conductive pads are electrically connected to the first and second mesa structures, respectively. The conductive bridging element has a projection image that is spaced apart from those of the first and second conductive pads in a plan view of the light-emitting device. A light-emitting module including the light-emitting device, and a display apparatus including the light-emitting device are also disclosed.

Light-emitting device, light-emitting module including the same and display apparatus including the same

A light-emitting diode includes a semiconductor light-emitting stack and a distributed Bragg reflector (DBR) structure. The semiconductor light-emitting stack has a first surface and a second surface opposite to each other. The DBR structure is disposed on one of the first surface and the second surface of the semiconductor light-emitting stack, and includes at least one set of first light-transmitting layers and at least one set of second light-transmitting layers stacked on each other in the first direction. The first light-transmitting layers has interface roughness greater than that of the second light-transmitting layers.

Light-emitting diode

High-voltage light-emitting device

A composite reflective structure includes at least one dielectric multilayer element which includes a first dielectric layer having a first refractive index, a second dielectric layer having a second refractive index, and a stress buffer layer interposed therebetween. The first refractive index is greater than the second refractive index. Also disclosed herein is a light-emitting diode chip including the abovementioned composite reflective structure and a light-emitting diode device including the light-emitting diode chip.

Composite reflective structure and light-emitting diode chip and light-emitting diode device including the same

A light-emitting diode includes an N-type cladding layer, and a superlattice structure, an active layer, a P-type electron-blocking layer, and a P-type cladding layer disposed on the N-type cladding layer in such order. The superlattice structure includes at least one first layered element which has a sub-layer made of a nitride-based semiconductor material including Al, and having an energy band gap greater than that of said electron-blocking layer. The P-type electron-blocking layer is made of a nitride-based semiconductor material including Al, and has an energy band gap greater than that of the P-type cladding layer.

An epitaxial light emitting structure includes n-type and p-type semiconductor layers, and a light emitting component disposed therebetween. The light emitting component includes a multiple quantum well structure which contains a plurality of first periodic layered elements, each of which includes first, second and third layers alternately stacked on one another. For each of the first periodic layered elements, the first, second and third layers respectively have a first energy bandgap (Eg), a second energy bandgap (Eg), and a third energy bandgap (Eg) that satisfy a relationship of Eg&#x3c;Eg&#x3c;Eg. Also disclosed herein is a light emitting diode which includes the aforementioned epitaxial light emitting structure.

Epitaxial light emitting structure and light emitting diode

A light-emitting diode includes an N-type cladding layer, and a superlattice structure, an active layer, a P-type electron-blocking layer, and a P-type cladding layer disposed on the N-type cladding layer in such order. The superlattice structure includes at least one first layered element which has first, second, and third sub-layers that are stacked on one another in a direction away from the N-type cladding layer. The first, second, and third sub-layers have energy band gaps Eg, Eg, and Egwhich satisfy a relationship of Eg&#x3c;Eg&#x3c;Eg. In addition, Egis greater than an energy band gap of the P-type electron-blocking layer.

A light emitting chip includes a first-type semiconductor layer, a light emitting layer, and a second-type semiconductor layer which are disposed in such order, a passivation layer, and a current spreading layer. The second-type semiconductor layer and the light emitting layer cooperate to form a mesa structure which partially exposes the first-type semiconductor layer. The mesa structure has a lateral surface over which the passivation layer is disposed. The current spreading layer is disposed in contact with the second-type semiconductor layer. A distance between peripheries of a contact surface of the current spreading layer and a top surface of the second-type semiconductor layer is not greater than 5 &#x3bc;m. A method for producing the chip is also disclosed.

Light emitting chip and method of producing the same

Growing community of inventors

Xiamen, China

Chung-Ying Chang