Epistar Corporation

United Epitaxy Company, Inc.

Chung-Ying Chang

Tzong-Liang Tsai

Tzu-Ching Yang

Jenq-Dar Tsay

Chia-Sheng Chang

Dennis Wang

Chih-Sung Chang

Chi Shen

Yun-Ming Lo

Wen-Jia Huang

Chao-Hsu Lai

Ying-Chan Tseng

Tien Kun Lin

A light-emitting device disclosed herein comprises a patterned substrate having a plurality of cones, wherein a space is between two adjacent cones. A light-emitting stack formed on the cones. Furthermore, the cones comprise an area ratio of a top area of the cone and a bottom area of the cone which is less than 0.0064.

Light-emitting device having patterned substrate and method of manufacturing thereof

A wafer carrier comprises a supporting body having an opening therein, wherein said opening in said supporting body has a concave sidewall and a bottom surface in said supporting body which is curved in cross section; a plurality of vertical supporting rods configured to support and contact a wafer received in said opening and to displace said wafer from the bottom surface of the opening in said supporting body; wherein one of said supporting rods has an end for contacting and supporting said wafer; and wherein when viewing from a top view of the wafer carrier, one of said supporting rods has a base lining on the concave sidewall of said opening in said supporting body, a first concave side opposite to the base and two second concave sides connecting the base and the first concave side.

Wafer carrier

Disclosed is about an epitaxial growth system, including an epitaxial growth reactor chamber, a susceptor including a supporting surface and disposed in the epitaxial growth reactor chamber, and a plurality of wafer fixing elements disposed on the supporting surface. The supporting surface of the susceptor includes a rim, and each of the wafer fixing elements includes a boundary. At least three first heating elements are disposed under the susceptor and arranged in parallel to the supporting surface.

Epitaxial growth systems

A light-emitting device having a light-emitting epitaxy structure. The light-emitting epitaxy structure has a modulus of a critical reverse voltage not less than 50 volts, while the light-emitting epitaxy structure is reverse-biased at a current density of &#x2212;10 &#x3bc;A/mm, and has a luminous efficiency not less than 50 lumen/Watt, while the light-emitting epitaxy structure is forward-biased at a current density of 150 mA/mm.

Light-emitting device and the manufacturing method thereof

The present invention provides a method of manufacturing a low resistivity p-type compound semiconductor material over a substrate. The method of the present invention comprises the steps of forming a p-type impurity doped compound semiconductor layer on the substrate by either HVPE, OMVPE or MBE and applying a microwave treatment over the p-type impurity doped compound semiconductor layer for a period of time. The high resistivity p-type impurity doped compound semiconductor layer is converted into a low resistivity p-type compound semiconductor material according to the present invention.

Method of manufacturing light emitting diode with low-receptivity p-type impurity layers formed by microwave treatment

The present invention provides a semiconductor device with a roughened surface that increases external quantum efficiency thereof. Roughening of the semiconductor device surface is done by epitaxial growth techniques that may include hydride vapor phase epitaxy (HVPE) technique, organometallic vapor phase epitaxy (OMVPE) technique, or molecular beam epitaxy (MBE) technique.

Growing community of inventors

Hsinchu, Taiwan

Chung-Ying Chang