Taiwan Semiconductor Manufacturing Comp. Ltd.

Chung-Yi Su

Chi On Chui

Da-Yuan Lee

Ching-Hwanq Su

Chung-Chiang Wu

Kuan-Ting Liu

Shih-Hang Chiu

Ji-Cheng Chen

Tsung-Da Lin

Tai-Wei Hwang

Jyun-Yi Wu

A method includes forming a dummy gate stack on a semiconductor region, forming gate spacers on sidewalls of the dummy gate stack, removing the dummy gate stack to form a recess between the gate spacers, and forming a silicon oxide layer on the semiconductor region. The silicon oxide layer extends into the recess. A high-k dielectric layer is deposited over the silicon oxide layer, and a silicon layer is deposited over the high-k dielectric layer. The silicon layer extends into the recess. The high-k dielectric layer and the silicon layer are in-situ deposited in a same vacuum environment. The method further includes performing an annealing process on the silicon layer and the high-k dielectric layer, removing the silicon layer, and forming a gate electrode over the high-k dielectric layer. The gate electrode fills the recess.

Method forming gate stacks adopting thin silicon cap

Certain embodiments of a semiconductor device and a method of forming a semiconductor device comprise forming a high-k gate dielectric layer over a short channel semiconductor fin. A work function metal layer is formed over the high-k gate dielectric layer. A seamless metal fill layer is conformally formed over the work function metal layer.

Metal gate fill for short-channel and long-channel semiconductor devices

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Taipei, Taiwan

Chung-Yi Su