Micron Technology Incorporated

Aptina Imaging Corporation

Chung-Yi Lee

Fei Wang

Ezequiel Vidal Russell

Reha M Bafrali

Ezequiel Vidal-Russell

Some embodiments include a reticle which includes first pattern features and second pattern features. A first optimal dose of actinic radiation is associated with the first pattern features and a second optimal dose of the actinic radiation is associated with the second pattern features. The second pattern features are larger than the first pattern features. Each of the second pattern features has a configuration which includes a central region laterally surrounded by an outer region, with the central region being of different opacity than the outer region. The configurations of the second pattern features balance the second optimal dose of the actinic radiation to be within about 5% of the first optimal dose of the actinic radiation. Some embodiments include photo-processing methods.

Reticle constructions and photo-processing methods

A photomask includes a substrate having a device region and an adjacent edge region over transparent material. The device region includes spaced primary features of constant pitch at least adjacent the edge region. The edge region includes spaced sub-resolution assist features of the constant pitch of the spaced primary features at least adjacent the device region and which are off-phase by from about 30&#xb0; to about 150&#xb0; from +/&#x2212;180&#xb0;. Additional embodiments, including methods, are disclosed.

Photomasks, methods of forming a photomask, and methods of photolithographically patterning a substrate

Several embodiments of photolithography devices and associated methods of focal calibration are disclosed herein. In one embodiment, a method for determining a focus shift in a photolithography system include placing a microelectronic substrate on a substrate support of the photolithography system and producing first and second refraction patterns on the photoresist layer corresponding to first and second grating patterns, respectively, of a single reticle by illuminating the first and second grating patterns with an asymmetric monopole source perpendicular to the first and second grating patterns. The method further includes measuring an image shift between the first and second refraction patterns on the photoresist layer and determining a defocus shift of the illumination source based on the image shift.

Calibration methods and devices useful in semiconductor photolithography

Embodiments of the present invention provide computer readable media encoded with executable instructions for modeling an intensity profile at a surface illuminated by an illumination source through a mask. Further embodiments provide methods for correcting a mask pattern and methods for selecting an illumination source. Still further embodiments provide masks and integrated circuits produced using a model of the illumination source. Embodiments of the present invention take into account the polarization of the illumination source and are able to model the effect of polarization on the resultant intensity profile.

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Boise, ID, United States of America

Chung-Yi Lee