National Chung Shan Institute of Science and Technology

Chung-Yen Lu

Chia-Ting Lin

Yang-Kuo Kuo

Jian-Long Ruan

Yi-Hsiuan Yu

Lea-Hwung Leu

Kuan-Ting Lai

Yung-Han Huang

Chia-Kan Hao

Jlin-Fuh Yau

To provide a gas-liquid separator of a water electrolysis system, comprising: a liquid feeding atomizer and a gas-liquid separation chamber, wherein the liquid feeding atomizer includes a liquid feeding pressurized tube; and an atomizing spray head, in which the atomizing spray head converts a gas-liquid mixed liquor after pressurized by the liquid feeding pressurized tube into a mist droplet gas-liquid mixture. The gas-liquid separation chamber comprises a spiral flowing way, and the spiral flowing way extends the time that the mist droplet gas-liquid mixture spraying into the gas-liquid separation chamber flows downwards to the bottom of the gas-liquid separation chamber; an ultrasonic oscillation mechanism; a stirrer; an internal reservoir; and a filter mechanism, which performs the gas-liquid separation for unbroken bubbles in the mist droplet gas-liquid mixture through the pore difference.

Gas-liquid separator of water electrolysis system

The present invention adopts an aluminum nitride substrate with great heat dissipation, great thermal conductivity, high electrical insulation, long service life, corrosion resistance, high temperature resistance, and stable physical characteristics. A high-quality zinc oxide film with a wide energy gap is fabricated on the aluminum nitride substrate by magnetron radio frequency (RF) sputtering. Compared with general vapor deposition, chemical vapor deposition and hydrothermal, the magnetron RF sputtering grows the high-quality zinc oxide film with few defects. The zinc oxide film with few defects concentration is an important key technology for short-wavelength optoelectronic devices, which decrease leakage currents of the optoelectronic devices, reduces flicker noise, and further improves its UV-visible rejection ratio.

Method for preparing aluminum nitride-zinc oxide ultraviolet detecting electrode

The present invention relates to a method for improving adhesion between ceramic and a thick film circuit. The method is particularly directed to accelerate the formation of a ceramic-metal eutectic phase between the ceramic carrier and the metal circuit by solid-phase diffusion bonding under a positive atmosphere. A metallic conductive slurry or its oxide slurry is printed on the surface of the ceramic carrier to form a circuit pattern by a thick film screen printing. The ceramic carrier is placed in an oven with temperature controlled by a program under a positive-pressure atmosphere of an inert gas including nitrogen, hydrogen or their mixtures. An eutectic phase is formed between the ceramic carrier and the metal circuit under a high temperature eutectic condition to increase the adhesion between the ceramic carrier and the thick film circuit.

Method for improving adhesion between ceramic carrier and thick film circuit

A method of forming a pattern with high aspect ratio on a polycrystalline aluminum nitride substrate comprises the steps of (A) providing an aluminum nitride substrate and forming a barrier layer on the aluminum nitride substrate; (B) etching the barrier layer with an energy beam to form at least one recess in the barrier layer; (C) plasma etching the substrate to deepen the recess into the aluminum nitride substrate; (D) removing the barrier layer to obtain the aluminum nitride substrate having at least one pattern with high aspect ratio. The method uses the energy beam to directly form a pattern on the barrier layer, and further employs plasma etching to prepare the aluminum nitride substrate having a pattern with high aspect ratio quickly and effectively.

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Taoyuan, Taiwan

Chung-Yen Lu