United Microelectronics Corp.

Fujian Jinhua Integrated Circuit Co., Ltd.

Chung-Yen Feng

Yi-Wei Chen

Li-Wei Feng

Chi-Mao Hsu

Tsun-Min Cheng

Hsin-Fu Huang

Ying-Chiao Wang

Pin-Hong Chen

Chih-Chieh Tsai

Tzu-Chieh Chen

Kai-Jiun Chang

Yi-An Huang

Chia-Chen Wu

Chen-An Kuo

Po-Chun Lai

Ching-Wei Teng

The present invention provides a storage node contact structure of a memory device comprising a substrate having a dielectric layer comprising a recess, a first tungsten metal layer, and an adhesive layer on the first tungsten metal layer and a second tungsten metal layer on the adhesive layer, wherein the second tungsten metal layer is formed by a physical vapor deposition (PVD).

Storage node contact structure of a memory device

An LDMOS includes a semiconductor substrate. A well is disposed within the semiconductor substrate. A body region is disposed within the well. A first gate electrode is disposed on the semiconductor substrate. A source electrode is disposed at one side of the first gate electrode. The source electrode includes a source contact area and numerous vias. The vias connect to the source contact area. The vias extend into the semiconductor substrate. A first drain electrode is disposed at another side of the first gate electrode and is opposed to the source electrode.

LDMOS and fabricating method of the same

Storage node contact structure of a memory device and manufacturing methods thereof

Growing community of inventors

Hsinchu County, Taiwan

Chung-Yen Feng