Taiwan Semiconductor Manufacturing Comp. Ltd.

Chung-Wei Lin

Tsung-Yu Chiang

Kuang-Hsin Chen

Bor-Zen Tien

A semiconductor device is provided. The semiconductor device includes a doped isolation structure formed above a substrate, and the doped isolation structure includes a first doped portion and a second doped portion, and a doped concentration of the second doped portion is different from a doped concentration of the first doped portion. The semiconductor device also includes a first fin partially embedded in the doped isolation structure, and a sidewall surface of the first fin is in direct contact with the first doped portion. The semiconductor device includes a second fin partially embedded in the doped isolation structure, and the doped isolation structure is between the first fin and the second fin, and a sidewall surface of the second fin is in direct contact with the second doped portion.

Mechanisms for forming FinFETs with different fin heights

A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a first fin structure and a second fin structure over the substrate. There is a gap between the first fin structure and the second fin structure. The semiconductor device structure includes an isolation structure having a thin portion and a thick portion. A first upper portion of the first fin structure and a second upper portion of the second fin structure protrude from the thin portion. The thick portion is partially between the first upper portion and the second upper portion. The semiconductor device structure includes a dummy gate electrode over the thick portion, the first upper portion, and the second upper portion. The semiconductor device structure includes a gate electrode over the first fin structure and the thin portion.

Semiconductor device structure with fin structure and method for forming the same

A semiconductor device is provided. The semiconductor device includes a first fin partially surrounded by a first isolation structure and a second fin partially surrounded by a second isolation structure. The second isolation structure has a dopant concentration higher than that of the first isolation structure, and a height difference is between a top surface of the first isolation structure and a top surface of the second isolation structure.

Methods for forming a semiconductor device are provided. The method includes forming a first fin and a second fin over a substrate and forming a first isolation structures and a second isolation structure adjacent to the substrate. The first fin is partially surrounded by the first isolation structure and a second fin is partially surrounded by the second isolation structure, and the first isolation structure has a dopant concentration higher than that of the second isolation structure.

Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a first fin partially surrounded by a first isolation structure and protruding through a top surface thereof. The semiconductor device also includes a second fin partially surrounded by a second isolation structure and protruding through a top surface thereof. The top surface of the first isolation structure is higher than the top surface of the second isolation structure such that the second fin has a height higher than that of the first fin. The second isolation structure has a dopant concentration higher than that of the first isolation structure.

Growing community of inventors

Toufen, Taiwan

Chung-Wei Lin