Taiwan Semiconductor Manufacturing Comp. Ltd.

Chung-Wei Hung

Cheng-Yi Peng

Bor-Zen Tien

Song-Bor Lee

Jung-Ting Chen

Ying-Hua Lai

Ting Tsai

Chih-Hung Lu

Chia-Der Chang

Ming-Chang Lee

Chung-Tsun Sun

A semiconductor device, includes a channel region, and a source/drain region adjacent to the channel region. The source/drain region includes a first epitaxial layer, a second epitaxial layer epitaxially formed on the first epitaxial layer and a third epitaxial layer epitaxially formed on the second epitaxial layer, and the first epitaxial layer is made of SiAs.

Semiconductor device and manufacturing method thereof

A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a gate stack positioned over the semiconductor substrate. The semiconductor device structure includes spacers positioned over sidewalls of the gate stack. The semiconductor device structure includes a first protective layer positioned between the gate stack and the spacers and between the spacers and the semiconductor substrate. The semiconductor device structure includes a second protective layer positioned between the spacers and the first protective layer. The first protective layer and the second protective layer include different materials.

Semiconductor device structure and method for forming the same

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Tainan, Taiwan

Chung-Wei Hung