Taiwan Semiconductor Manufacturing Comp. Ltd.

Chung-Wei Hsu

Kuo-Cheng Chiang

Mao-Lin Huang

Jia-Ni Yu

Lung-Kun Chu

Chih-Hao Wang

Kuan-Lun Cheng

Ching-Wei Tsai

Hou-Yu Chen

Chun-Fu Lu

In some embodiments, the present disclosure relates to an integrated chip that includes a first nanosheet field effect transistor (NSFET). The first NSFET includes a first nanosheet channel structure arranged over a substrate, a second nanosheet channel structure arranged directly over the first nanosheet channel structure, and a first gate electrode structure. The first and second nanosheet channel structures extend in parallel between first and second source/drain regions. The first gate electrode structure includes a first conductive ring and a second conductive ring that completely surround outer sidewalls of the first nanosheet channel structure and the second nanosheet channel structure, respectively, and that comprise a first material. The first gate electrode structure also includes a passivation layer that completely surrounds the first and second conductive rings, is arranged directly between the first and second nanosheet channel structures, and comprises a second material different than the first material.

Tuning threshold voltage in nanosheet transitor devices

A method of forming a semiconductor device includes forming a first dielectric layer over a first channel region in a first region and over a second channel region in a second region; introducing a first dipole element into the first dielectric layer in the first region to form a first dipole-containing gate dielectric layer in the first region; forming a second dielectric layer over the first dipole-containing gate dielectric layer; introducing fluorine into the second dielectric layer to form a first fluorine-containing gate dielectric layer over the first dipole-containing gate dielectric layer; and forming a gate electrode over the first fluorine-containing gate dielectric layer.

Method of forming a transistor device having dipole-containing gate dielectric layer and fluorine-containing gate dielectric layer

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Baoshan, China

Chung-Wei Hsu