Industrial Technology Research Institute

Chung-Ta Cheng

Ming-Chia Li

An-Tse Lee

Kuo-Chi Chiu

Chin-Tien Yang

Tzuan-Ren Jeng

Chien-Liang Huang

Jung-Po Chen

Sheng-Li Chang

Ming-Fang Hsu

Disclosed is a method of patterning a layered material. A layered material is provided, and a photoresist layer is formed thereon. The photoresist layer is patterned by a focused laser beam to expose a part of the layered material. The exposed layered material is etched to pattern the layered material.

Methods of patterning layered-material and forming imprinting mold

A recording layer including a novel organic compound for a high density optical recording medium is provided. The information may be recorded on the recording layer at a 2&#xd7; speed or higher speed with a relatively lower writing power so that heat distribution of the recording layer in the irradiated area is not likely to become steep both in time and space. The organic compound incorporated in the recording layer has the following general chemical structural formula (I). 

Organic compound for recording layer for high speed recording of information and optical recording medium including the same

An inorganic resist material is provided, which is an incomplete oxide of a phase-change material. The oxygen content in the inorganic resist material is lower than the stoichiometric oxygen content of a complete oxide of the phase-change material, and a general formula of the inorganic resist material is AO, in which A represents the phase-change material, and x is between 5 at. % and 65 at. %. The inorganic resist material can be used to form line patterns or recording pits with size smaller than the exposure light spot by using the laser of conventional lithography process as an exposure source.

Inorganic resist material and nano-fabrication method by utilizing the same

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Taipei County, Taiwan

Chung-Ta Cheng