Samsung Electronics Co., Ltd.

Chung Sun Lee

Jin-Woo Park

Yong Il Kim

Yong Hwan Kwon

Han Kyu Seong

Il Hwan Kim

Tan Sakong

Ji Hye Yeon

Ji Hwan Hwang

Myung-Sung Kang

Un Byoung Kang

Kyong Hwan Koh

Hyung Sun Jang

Woon Seong Kwon

Hyeon Jun Jin

A method of manufacturing a semiconductor package includes forming a plurality of trenches at a first surface of a silicon substrate, forming a conductive pad inside each of the plurality of trenches, forming a redistribution layer on the first surface of the silicon substrate, forming an external connection terminal on a first surface of the redistribution layer, removing the silicon substrate to expose each conductive pad, mounting a semiconductor chip to be connected to the conductive pads, and forming an encapsulant to cover at least one surface of the semiconductor chip.

Method for manufacturing semiconductor package having redistribution layer

A light emitting diode display device includes a display board comprising a plurality of unit pixels, a drive circuit board including a plurality of drive circuit regions corresponding to the plurality of unit pixels, and a plurality of bumps interposed between the plurality of unit pixels and the plurality of drive circuit regions. The plurality of unit pixels comprises a first unit pixel including a first P electrode. The plurality of drive circuit regions comprises a first drive circuit region corresponding to the first unit pixel and a first pad connected to a first drive transistor, the plurality of bumps includes a first solder in contact with the first pad, and a first bump on the first solder and including a first filler in contact with the first P electrode, the first solder includes at least one of tin and silver, and the first filler includes copper or nickel.

Light emitting diode display device

A method of manufacturing a semiconductor device includes forming a diffusion barrier layer on a substrate, and forming at least two features on the substrate such that the diffusion barrier layer is respectively disposed between each feature and the substrate and contacts the at least two features. A first impurity region of the substrate contains impurities of a first type, a second impurity region of the substrate contains impurities of a second type, different from the first type, a first feature of the at least two features is in the first impurity region, and a second feature of the at least two features is in the second impurity region, such that the second feature is electrically isolated from first feature by the different impurity regions.

Method of manufacturing a semiconductor device having an even coating thickness using electro-less plating, and related device

Growing community of inventors

Anyang-si, South Korea

Chung Sun Lee