Samsung Electronics Co., Ltd.

Chung-sam Jun

Yu-sin Yang

Sang-kil Lee

Woo-seok Ko

Sun-Yong Choi

Sang-Mun Chon

Yun-Jung Jee

Ji-Hye Kim

Pil-sik Hyun

Yun-jung Jee

Moon-Shik Kang

Jong-An Kim

Sang-bong Choi

Kwan-Woo Ryu

Hwan-Shik Park

Sung-yoon Ryu

Sung-Yoon Ryu

Seong-Jin Yun

Sang-Min Kim

Sang-mun Chon

Souk Kim

Tae-Kyoung Kim

Kye-Weon Kim

Tae-Min Eom

Young-hoon Sohn

Jang-Ik Park

Min-Kook Kim

Gil-woo Song

Hyung-Su Son

Yu-Sin Yang

Byung-Sug Lee

Ki-Suk Chung

Kyu-hong Lim

Hyung-suk Cho

Byung-am Lee

Yong-Deok Jeong

Joon-Seo Song

Kyoung-Su Shin

Sang-hoon Lee

Jung-Hwan Kim

Tae-Sung Kim

Jin-Woo Lee

Hyun-woo Kim

Kwang-soo Kim

Young-Hwan Kim

Ji-Young Shin

Dong-Jin Park

Seong-jin Kim

Kwang-Soo Kim

Woo-jin Jung

Byeong-hwan Jeon

Jung-Soo Kim

Dong-Chun Lee

Moon-Kyung Kim

Tae-joong Kim

Tae-kyoung Kim

Jeong-Hyun Choi

Young-Jee Yoon

Koung-Su Shin

Young-Hoon Sohn

Choon-Shik Leem

Joo-Woo Kim

Joung-Soo Kim

Yoo-Seok Jang

Pil-Sik Hyun

Doo-Guen Song

Min-Ho Rim

Ji-Hae Kim

Ho-Jeong Kwak

Sang-Bong Choi

Seung-Won Chae

Jeong-hoi Kim

Baek-man Sung

Hyun-suk Cho

Chae-ho Shin

Jae-youn Wi

Kong-Jung Sa

Kwang-il Shin

So-Yeon Yun

Min-chul Yoon

Hyun-Jong Kim

Kyung-Suk Song

Bang-Won Kim

Dong-Su Ha

Provided are a method of inspecting a surface and a method of manufacturing a semiconductor device. The methods include preparing a substrate, selecting a spatial resolution of a first optical device by setting a magnification of an imaging optical system, emitting multi-wavelength light toward a first measurement area of the substrate and obtaining first wavelength-specific images, generating first spectrum data based on the first wavelength-specific images, generating first spectrum data of respective pixels based on the first wavelength-specific images, and extracting a spectrum of at least one first inspection area having a range of the first measurement area or less from the first spectrum data, and analyzing the spectrum. The first optical device includes a light source, an objective lens, a detector, and an imaging optical system. The obtaining first wavelength-specific images includes using the imaging optical system and the detector.

Method of inspecting surface and method of manufacturing semiconductor device

Provided is a method of inspecting a pattern defect. The method includes: applying a voltage to an object to be inspected and measuring an inspection signal generated in a pattern of the object to be inspected due to the voltage applied to the object to be inspected over time; generating an intensity image showing a relationship between an intensity of the inspection signal measured in the pattern and a time by processing the inspection signal; and detecting a pattern defect position by comparing the intensity image with a comparative intensity image.

Method of inspecting pattern defect

In a defect inspection method, first and second inspection conditions having a first sensitivity of detection signal and having a second sensitivity of a detection signal for a defect of interest (DOI), respectively, are determined. The first and second sensitivities are different. First and second images of the same detection region on a substrate surface under the first and second inspection conditions respectively, are obtained. The first and second images are matched to detect a defect in the detection region.

Defect inspection method and defect inspection apparatus

An optical measuring method includes generating a Bessel beam, filtering the Bessel beam to generate a focused Bessel beam, vertically irradiating the focused Bessel beam onto a substrate in which an opening is formed, and detecting light reflected from the substrate to obtain an image of a bottom surface of the opening.

Optical measuring method and apparatus, and method of manufacturing semiconductor device using the same

A method of inspecting a wafer may include: loading of a wafer onto a stage, the wafer having a plurality of dies thereon; positioning of the wafer such that a plurality of electron beam columns on the wafer respectively face a partial region of each of the plurality of dies on the wafer; scanning the respective partial regions of each of the plurality of dies by using the electron beam columns; and combining a plurality of partial images that are obtained by scanning the partial regions to provide a die image.

Method of inspecting wafer using electron beam

A wafer inspection apparatus including a derivation unit configured to derive a first polar coordinate set and a second polar coordinate set using a latin hypercube sampling, the first and second polar coordinate sets not overlapping each other, an inspection unit configured to perform defect inspections of a plurality of wafers using the first and second polar coordinate sets, a support unit configured to support the wafers, and an calculation unit configured to combine a defect inspection result using the first polar coordinate set with a defect inspection result using the second polar coordinate set may be provided.

Apparatus for inspecting wafer

An optical transformation module includes a light generator generating a parallel light beam to be incident onto a surface of an inspection object and changing a wavelength of the parallel light beam, and a rotating grating positioned on a path of the parallel light beam and rotatable by a predetermined rotation angle such that the parallel light beam is transformed according to the wavelength of the parallel light beam and the rotation angle of the rotating grating to have a desired incidence angle and a desired incidence position onto the surface of the inspection object.

Optical transformation module and optical measurement system, and method of manufacturing a semiconductor device using optical transformation module and optical measurement system

An apparatus and method of forming an epitaxial layer are provided. The apparatus includes a process chamber in which an epitaxial process is performed to form epitaxial layer on a substrate. A first supplier supplies source gases for the epitaxial layer into the process chamber. A second supplier supplies dopants into the process chamber. A detector detects a composition ratio of the epitaxial layer and a concentration of the dopants in the epitaxial layer during the epitaxial growth process. And a controller controls a mass flow of at least one of the source gases and a mass flow of the dopants in-line with the epitaxial growth process. Accordingly, the layer thickness of the epitaxial layer can be accurately controlled in real time in line with the epitaxial process.

Apparatus for forming a thin layer and method of forming a thin layer on a substrate using the same

A broadband light source includes a first electrodeless lamp to generate first broadband light from plasma, a first elliptical reflector having first and second focuses, the first elliptical reflector enclosing a rear portion of the first electrodeless lamp positioned at the first focus of the first elliptical reflector such that the first broadband light is reflected from the first elliptical reflector toward a light collector as a collective light, a symmetrically curved reflector having a third focus, the symmetrically curved reflector positioned such that the third focus is coincident with one of the first and second focuses, and a laser irradiator to provide a laser beam to the first electrodeless lamp.

Broadband light source and optical inspector having the same

Spectral ellipsometry measurement systems are provided including a polarizer that rotates at a first angle and adjusts a polarizing direction of incident light of a measurement sample; a compensator that rotates at a second angle, different from the first angle, and adjusts a phase difference of the incident light; an analyzer that rotates at a third angle and adjusts a polarizing direction of light reflected on the measurement sample; a detector that detects a spectral image from the reflected light; a controller that controls one of the polarizer, the compensator, and the analyzer according to polarizer-compensator-analyzer (PCA) angle sets including the first to third angles; and a processor that receives, from the detector, a first spectral image corresponding to a first PCA angle set and a first wavelength and a second spectral image corresponding to a second PCA angle set and a second wavelength, different from the first wavelength, and generates a polarizer-compensator-analyzer rotating (PCAR) spectral matrix using the first and second spectral images.

Spectral ellipsometry measurement and data analysis device and related systems and methods

Example embodiments relate to an apparatus and method for inspecting a substrate defect. The substrate defect inspecting apparatus includes a substrate, a light source emitting an infrared beam to the substrate, a detector detecting the infrared beam reflected from the substrate, and a defect analyzer receiving first information and second information from the detector and analyzing defects existing in the substrate. According to at least one example embodiment, the second information is acquired during a later process than the first information.

Apparatus and method for inspection of substrate defect

A spatial image having 2D spatial information is obtained from a surface of a sample by an image creating method. The surface of the sample is milled to obtain an elemental image having material information from the milled surface. The spatial image and the elemental image are composed to form a 2D spatial/elemental image.

Image creating method and imaging system for performing the same

An overlay measuring method includes irradiating an electron beam onto a sample, including a multi-layered structure of overlapped upper and lower patterns formed thereon, to obtain an actual image of the upper and lower patterns. A first image representing the upper pattern and a second image representing the lower pattern are obtained from the actual image. A reference position for the upper and lower patterns is determined from a design image of the upper and lower patterns. A position deviation of the upper pattern with respect to the reference position in the first image and a position deviation of the lower pattern with respect to the reference position in the second image are calculated to determine an overlay between the upper pattern and the lower pattern.

Overlay measuring method and system, and method of manufacturing semiconductor device using the same

An apparatus and a system for measuring the thickness of a thin film are provided. The apparatus includes a signal detector, a Fast Fourier Transform (FFT) generator, an Inverse Fast Fourier Transform (IFFT) generator, and a thickness analyzer. The signal detector detects an electric field signal with respect to a reflected light that is reflected from a thin film. The FFT generator performs FFT with respect to the electric field signal to separate a DC component from an AC component of the electric field signal. The IFFT generator receives the separated AC component of the electric field signal, performs IFFT with respect to the AC component, and extracts a phase value of the AC component. The thickness analyzer measures the thickness of the thin film using the extracted phase value.

Apparatus for measuring thickness of thin film, system including the apparatus, and method for measuring thickness of thin film

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Suwon-si, South Korea

Chung-sam Jun